Fabrication of UV-C photodetector with ultimate stability in extreme space environments (radiation, low temperature) using aerosol-deposited Ga₂O₃

We report on the fabrication and characterization of a Ga₂O₃-based UV-C photodetector using the aerosol deposition (AD) method. By optimizing the size and crystallinity of the Ga₂O₃ powder, we were able to obtain a uniform thin film with high transmittance (70–80%) without the need for additional heat treatment or high vacuum environments. The resulting Ga₂O₃ film exhibited a high and selective response to 254 nm wavelength light, even without any treatment, and remained stable when exposed to γ-radiation. The photodetector also performed well in extreme temperatures (−196 °C–150 °C), making it suitable for use in harsh environments, such as the space industry. Our findings demonstrate the potential of the AD method for the fabrication of high-quality Ga₂O₃ thin films for photodetector applications.