Fabrication of polydimethylsiloxane shadow masks for chemical solution deposition of CdS thin-film transistors

J. H. Lee; J. W. Yoon; I. G. Kim; J. S. Oh; H. J. Nam; D. Y. Jung

doi:10.1016/j.tsf.2008.02.041

Fabrication of polydimethylsiloxane shadow masks for chemical solution deposition of CdS thin-film transistors

J. H. Lee
, J. W. Yoon
, I. G. Kim
, J. S. Oh
, H. J. Nam
, D. Y. Jung

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

PDMS (polydimethylsiloxane) shadow masks were fabricated by replica molding using laser-patterned metal shadow masks as primary templates, which were applied to solution as well as vapor deposition to prepare patterned thin films on solid substrates. We demonstrated a method of fabricating cadmium sulfide (CdS) thin-film transistors (TFTs) using the prepared PDMS shadow masks thanks to their solution-tight, free-standing and elastic characteristics. The patterned CdS thin films were deposited by chemical solution deposition in aqueous solution and aluminum metal electrodes were deposited by thermal evaporation. The electrical characteristics of the CdS/SiO₂/n-Si transistors consisted of a field effect mobility of ~ 0.5 cm²/Vs, a threshold voltage of ~ 14 V and an on/off ratio of ~ 10⁷.

Original language	English
Pages (from-to)	6492-6498
Number of pages	7
Journal	Thin Solid Films
Volume	516
Issue number	18
DOIs	https://doi.org/10.1016/j.tsf.2008.02.041
State	Published - 31 Jul 2008
Externally published	Yes

Keywords

Atomic force microscopy
Cadmium sulfate
Chemical solution deposition
Scanning electron microscopy
Soft lithography
Surface topography
Thin films

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10.1016/j.tsf.2008.02.041

Cite this

@article{60dafa90b74e4957b2cb9cdbdfc0a522,

title = "Fabrication of polydimethylsiloxane shadow masks for chemical solution deposition of CdS thin-film transistors",

abstract = "PDMS (polydimethylsiloxane) shadow masks were fabricated by replica molding using laser-patterned metal shadow masks as primary templates, which were applied to solution as well as vapor deposition to prepare patterned thin films on solid substrates. We demonstrated a method of fabricating cadmium sulfide (CdS) thin-film transistors (TFTs) using the prepared PDMS shadow masks thanks to their solution-tight, free-standing and elastic characteristics. The patterned CdS thin films were deposited by chemical solution deposition in aqueous solution and aluminum metal electrodes were deposited by thermal evaporation. The electrical characteristics of the CdS/SiO2/n-Si transistors consisted of a field effect mobility of \textasciitilde{} 0.5 cm2/Vs, a threshold voltage of \textasciitilde{} 14 V and an on/off ratio of \textasciitilde{} 107.",

keywords = "Atomic force microscopy, Cadmium sulfate, Chemical solution deposition, Scanning electron microscopy, Soft lithography, Surface topography, Thin films",

author = "Lee, \{J. H.\} and Yoon, \{J. W.\} and Kim, \{I. G.\} and Oh, \{J. S.\} and Nam, \{H. J.\} and Jung, \{D. Y.\}",

year = "2008",

month = jul,

day = "31",

doi = "10.1016/j.tsf.2008.02.041",

language = "English",

volume = "516",

pages = "6492--6498",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "18",

}

TY - JOUR

T1 - Fabrication of polydimethylsiloxane shadow masks for chemical solution deposition of CdS thin-film transistors

AU - Lee, J. H.

AU - Yoon, J. W.

AU - Kim, I. G.

AU - Oh, J. S.

AU - Nam, H. J.

AU - Jung, D. Y.

PY - 2008/7/31

Y1 - 2008/7/31

N2 - PDMS (polydimethylsiloxane) shadow masks were fabricated by replica molding using laser-patterned metal shadow masks as primary templates, which were applied to solution as well as vapor deposition to prepare patterned thin films on solid substrates. We demonstrated a method of fabricating cadmium sulfide (CdS) thin-film transistors (TFTs) using the prepared PDMS shadow masks thanks to their solution-tight, free-standing and elastic characteristics. The patterned CdS thin films were deposited by chemical solution deposition in aqueous solution and aluminum metal electrodes were deposited by thermal evaporation. The electrical characteristics of the CdS/SiO2/n-Si transistors consisted of a field effect mobility of ~ 0.5 cm2/Vs, a threshold voltage of ~ 14 V and an on/off ratio of ~ 107.

AB - PDMS (polydimethylsiloxane) shadow masks were fabricated by replica molding using laser-patterned metal shadow masks as primary templates, which were applied to solution as well as vapor deposition to prepare patterned thin films on solid substrates. We demonstrated a method of fabricating cadmium sulfide (CdS) thin-film transistors (TFTs) using the prepared PDMS shadow masks thanks to their solution-tight, free-standing and elastic characteristics. The patterned CdS thin films were deposited by chemical solution deposition in aqueous solution and aluminum metal electrodes were deposited by thermal evaporation. The electrical characteristics of the CdS/SiO2/n-Si transistors consisted of a field effect mobility of ~ 0.5 cm2/Vs, a threshold voltage of ~ 14 V and an on/off ratio of ~ 107.

KW - Atomic force microscopy

KW - Cadmium sulfate

KW - Chemical solution deposition

KW - Scanning electron microscopy

KW - Soft lithography

KW - Surface topography

KW - Thin films

UR - https://www.scopus.com/pages/publications/44649163211

U2 - 10.1016/j.tsf.2008.02.041

DO - 10.1016/j.tsf.2008.02.041

M3 - Article

AN - SCOPUS:44649163211

SN - 0040-6090

VL - 516

SP - 6492

EP - 6498

JO - Thin Solid Films

JF - Thin Solid Films

IS - 18

ER -

Fabrication of polydimethylsiloxane shadow masks for chemical solution deposition of CdS thin-film transistors

Abstract

Keywords

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