Fabrication of piezoelectrically driven micro-cantilever using Pb(Zr,Ti)O3 films

Jungryul Ahn; Sungjin Jun; Dongwoo Kim; Geun Young Yeom; Ji Beom Yoo; Jaichan Lee; T. Sands

Fabrication of piezoelectrically driven micro-cantilever using Pb(Zr,Ti)O₃ films

Jungryul Ahn, Sungjin Jun, Dongwoo Kim, Geun Young Yeom, Ji Beom Yoo, Jaichan Lee, T. Sands

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to conference › Paper › peer-review

9 Scopus citations

Abstract

Piezoelectrically driven micro-cantilevers using Pb(Zr,Ti)O₃ (PZT) films have been successfully fabricated by bulk micro-machining. PZT thin films were made by sol-gel process using a 1-3 propanediol and modified alkoxide precursors. The cantilever structures consist of piezoelectric PZT capacitors fabricated on a low stress SiN_x supporting layer. Flat micro-cantilever has been obtained by controlling the stress in Pt electrode and PZT layers. The dielectric constant and loss of the PZT thin films in the cantilever structure were 1000 and 2% at 100 kHz, respectively. The remanent polarization was 20 μC/cm². The micro-cantilever had a dc response of 84 nm/V. The micro-cantilevers had a resonant frequency of 19.5 kHz and the corresponding displacement of 2.97 μm at the applied bias of 1 V.

Original language	English
Pages	721-724
Number of pages	4
State	Published - 2000
Event	12th IEEE International Symposium on Applications of Ferroelectrics - Honolulu, HI, United States Duration: 21 Jul 2000 → 2 Aug 2000

Conference

Conference	12th IEEE International Symposium on Applications of Ferroelectrics
Country/Territory	United States
City	Honolulu, HI
Period	21/07/00 → 2/08/00

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Cite this

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title = "Fabrication of piezoelectrically driven micro-cantilever using Pb(Zr,Ti)O3 films",

abstract = "Piezoelectrically driven micro-cantilevers using Pb(Zr,Ti)O3 (PZT) films have been successfully fabricated by bulk micro-machining. PZT thin films were made by sol-gel process using a 1-3 propanediol and modified alkoxide precursors. The cantilever structures consist of piezoelectric PZT capacitors fabricated on a low stress SiNx supporting layer. Flat micro-cantilever has been obtained by controlling the stress in Pt electrode and PZT layers. The dielectric constant and loss of the PZT thin films in the cantilever structure were 1000 and 2\% at 100 kHz, respectively. The remanent polarization was 20 μC/cm2. The micro-cantilever had a dc response of 84 nm/V. The micro-cantilevers had a resonant frequency of 19.5 kHz and the corresponding displacement of 2.97 μm at the applied bias of 1 V.",

author = "Jungryul Ahn and Sungjin Jun and Dongwoo Kim and Yeom, \{Geun Young\} and Yoo, \{Ji Beom\} and Jaichan Lee and T. Sands",

year = "2000",

language = "English",

pages = "721--724",

note = "12th IEEE International Symposium on Applications of Ferroelectrics ; Conference date: 21-07-2000 Through 02-08-2000",

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TY - CONF

T1 - Fabrication of piezoelectrically driven micro-cantilever using Pb(Zr,Ti)O3 films

AU - Ahn, Jungryul

AU - Jun, Sungjin

AU - Kim, Dongwoo

AU - Yeom, Geun Young

AU - Yoo, Ji Beom

AU - Lee, Jaichan

AU - Sands, T.

PY - 2000

Y1 - 2000

N2 - Piezoelectrically driven micro-cantilevers using Pb(Zr,Ti)O3 (PZT) films have been successfully fabricated by bulk micro-machining. PZT thin films were made by sol-gel process using a 1-3 propanediol and modified alkoxide precursors. The cantilever structures consist of piezoelectric PZT capacitors fabricated on a low stress SiNx supporting layer. Flat micro-cantilever has been obtained by controlling the stress in Pt electrode and PZT layers. The dielectric constant and loss of the PZT thin films in the cantilever structure were 1000 and 2% at 100 kHz, respectively. The remanent polarization was 20 μC/cm2. The micro-cantilever had a dc response of 84 nm/V. The micro-cantilevers had a resonant frequency of 19.5 kHz and the corresponding displacement of 2.97 μm at the applied bias of 1 V.

AB - Piezoelectrically driven micro-cantilevers using Pb(Zr,Ti)O3 (PZT) films have been successfully fabricated by bulk micro-machining. PZT thin films were made by sol-gel process using a 1-3 propanediol and modified alkoxide precursors. The cantilever structures consist of piezoelectric PZT capacitors fabricated on a low stress SiNx supporting layer. Flat micro-cantilever has been obtained by controlling the stress in Pt electrode and PZT layers. The dielectric constant and loss of the PZT thin films in the cantilever structure were 1000 and 2% at 100 kHz, respectively. The remanent polarization was 20 μC/cm2. The micro-cantilever had a dc response of 84 nm/V. The micro-cantilevers had a resonant frequency of 19.5 kHz and the corresponding displacement of 2.97 μm at the applied bias of 1 V.

UR - https://www.scopus.com/pages/publications/0034473375

M3 - Paper

AN - SCOPUS:0034473375

SP - 721

EP - 724

T2 - 12th IEEE International Symposium on Applications of Ferroelectrics

Y2 - 21 July 2000 through 2 August 2000

ER -

Fabrication of piezoelectrically driven micro-cantilever using Pb(Zr,Ti)O₃ films

Abstract

Conference

UN SDGs

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