@inproceedings{32d23e7805f54aa3ae2ad15c78de35b1,
title = "Fabrication of graphene field-effect transistors by simple stripping from CVD-grown layers",
abstract = "We develop a simple technique to fabricate graphene field-effect-transistor (FET) devices. Our technique is stripping graphene by scotch tape from the chemical vapor deposition (CVD)-grown layer, except the gap region between the source and drain electrode. The current-voltage (I-V) characteristic of a graphene FET before stripping shows a large zero-bias conductance of 6.5 mS and no gate operation. After stripping, the zero gate bias conductance of the device is reduced to 23 μS and a clear gate operation is observed. The change of FET characteristics before and after stripping is due to the formation of a μm size graphene flake. There is large potential that this one-step stripping technique can be extended to a more controllable method to fabricate graphene FET devices.",
author = "Jongseung Hwang and Lee, \{Jae Hyun\} and Lee, \{Jong Cheol\} and Dongmok Whang and Hwang, \{Sung Woo\}",
year = "2010",
doi = "10.1109/NANO.2010.5697797",
language = "English",
isbn = "9781424470334",
series = "2010 10th IEEE Conference on Nanotechnology, NANO 2010",
pages = "615--618",
booktitle = "2010 10th IEEE Conference on Nanotechnology, NANO 2010",
note = "2010 10th IEEE Conference on Nanotechnology, NANO 2010 ; Conference date: 17-08-2010 Through 20-08-2010",
}