Fabrication and testing of antimony doped bismuth tri-iodide semiconductor gamma-ray detectors

Sasmit S. Gokhale; Hyuk Su Han; Oswaldo Pelaez; James E. Baciak; Juan C. Nino; Kelly A. Jordan

doi:10.1016/j.radmeas.2016.04.004

Fabrication and testing of antimony doped bismuth tri-iodide semiconductor gamma-ray detectors

Sasmit S. Gokhale
, Hyuk Su Han
, Oswaldo Pelaez
, James E. Baciak
, Juan C. Nino
, Kelly A. Jordan

University of Florida

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Antimony (Sb) doped bismuth tri-iodide (BiI₃) radiation detectors were fabricated from large single crystals that were grown using the modified vertical Bridgman technique. Detectors were prepared by subjecting the crystal surfaces to different mechanical and chemical treatments. Surface quality of the detectors was evaluated using optical microscopy. The influence of surface quality on detector performance was analyzed by measuring the leakage current for each of the detectors. The radiation response of the detectors was measured using an Americium (²⁴¹Am) gamma-ray source at room temperature. The first successful use of BiI₃ detectors for gamma-ray spectroscopy is reported here with energy resolution of 7.5% at 59.5 keV. The mobility-lifetime product for electrons was also estimated to be about 5.2 × 10^-4 cm²/V.

Original language	English
Pages (from-to)	1-8
Number of pages	8
Journal	Radiation Measurements
Volume	91
DOIs	https://doi.org/10.1016/j.radmeas.2016.04.004
State	Published - 1 Aug 2016
Externally published	Yes

Keywords

Bismuth tri-iodide
Gamma-ray detector
Radiation detector
Room temperature semiconductor detector
Surface treatment

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10.1016/j.radmeas.2016.04.004

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title = "Fabrication and testing of antimony doped bismuth tri-iodide semiconductor gamma-ray detectors",

abstract = "Antimony (Sb) doped bismuth tri-iodide (BiI3) radiation detectors were fabricated from large single crystals that were grown using the modified vertical Bridgman technique. Detectors were prepared by subjecting the crystal surfaces to different mechanical and chemical treatments. Surface quality of the detectors was evaluated using optical microscopy. The influence of surface quality on detector performance was analyzed by measuring the leakage current for each of the detectors. The radiation response of the detectors was measured using an Americium (241Am) gamma-ray source at room temperature. The first successful use of BiI3 detectors for gamma-ray spectroscopy is reported here with energy resolution of 7.5\% at 59.5 keV. The mobility-lifetime product for electrons was also estimated to be about 5.2 × 10-4 cm2/V.",

keywords = "Bismuth tri-iodide, Gamma-ray detector, Radiation detector, Room temperature semiconductor detector, Surface treatment",

author = "Gokhale, \{Sasmit S.\} and Han, \{Hyuk Su\} and Oswaldo Pelaez and Baciak, \{James E.\} and Nino, \{Juan C.\} and Jordan, \{Kelly A.\}",

year = "2016",

month = aug,

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doi = "10.1016/j.radmeas.2016.04.004",

language = "English",

volume = "91",

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journal = "Radiation Measurements",

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TY - JOUR

T1 - Fabrication and testing of antimony doped bismuth tri-iodide semiconductor gamma-ray detectors

AU - Gokhale, Sasmit S.

AU - Han, Hyuk Su

AU - Pelaez, Oswaldo

AU - Baciak, James E.

AU - Nino, Juan C.

AU - Jordan, Kelly A.

PY - 2016/8/1

Y1 - 2016/8/1

N2 - Antimony (Sb) doped bismuth tri-iodide (BiI3) radiation detectors were fabricated from large single crystals that were grown using the modified vertical Bridgman technique. Detectors were prepared by subjecting the crystal surfaces to different mechanical and chemical treatments. Surface quality of the detectors was evaluated using optical microscopy. The influence of surface quality on detector performance was analyzed by measuring the leakage current for each of the detectors. The radiation response of the detectors was measured using an Americium (241Am) gamma-ray source at room temperature. The first successful use of BiI3 detectors for gamma-ray spectroscopy is reported here with energy resolution of 7.5% at 59.5 keV. The mobility-lifetime product for electrons was also estimated to be about 5.2 × 10-4 cm2/V.

AB - Antimony (Sb) doped bismuth tri-iodide (BiI3) radiation detectors were fabricated from large single crystals that were grown using the modified vertical Bridgman technique. Detectors were prepared by subjecting the crystal surfaces to different mechanical and chemical treatments. Surface quality of the detectors was evaluated using optical microscopy. The influence of surface quality on detector performance was analyzed by measuring the leakage current for each of the detectors. The radiation response of the detectors was measured using an Americium (241Am) gamma-ray source at room temperature. The first successful use of BiI3 detectors for gamma-ray spectroscopy is reported here with energy resolution of 7.5% at 59.5 keV. The mobility-lifetime product for electrons was also estimated to be about 5.2 × 10-4 cm2/V.

KW - Bismuth tri-iodide

KW - Gamma-ray detector

KW - Radiation detector

KW - Room temperature semiconductor detector

KW - Surface treatment

UR - https://www.scopus.com/pages/publications/84964329857

U2 - 10.1016/j.radmeas.2016.04.004

DO - 10.1016/j.radmeas.2016.04.004

M3 - Article

AN - SCOPUS:84964329857

SN - 1350-4487

VL - 91

SP - 1

EP - 8

JO - Radiation Measurements

JF - Radiation Measurements

ER -

Fabrication and testing of antimony doped bismuth tri-iodide semiconductor gamma-ray detectors

Abstract

Keywords

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