Fabrication and characterization of optoelectronic device using CdSe nanocrystal quantum dots/single-walled carbon nanotubes heterostructure

The ability to transport extracted carriers from the development of NQDs (nanocrystal quantum dots) based optoelectronic sensors have drawn considerable attention due to NQDs' unique optical properties. Coupling of NQDs to 1-D nanostructures such as SWNTs (single-walled carbon nanotubes) is expected to produce a composite material which facilitated selective wave length absorption, charge transfer to 1-D nanostructures, and efficient electron transport. In this paper, we fabricated the optoelectric device based on cadmium selenide (CdSe) nanocrystal quantum dots (NQDs)/single-walled carbon nanotubes (SWNTs) heterostructure using dieletrophoretic force. The efficient charge transfer phenomena from CdSe to SWNT make CdSe-Pyridine (py)-SWNT unique heterostructures for novel optoelectric device. We monitored the electrical signatures from NQDs decorated SWNTs upon excitation and were able to elucidate the carrier transfer mechanism. The conductivity of CdSe-py-SWNT was increased when it was exposed at ultra violet (UV) lamp, and showed a function of wavelength of incident light.