Extraction technique for intrinsic subgap DOS in a-IGZO TFTs by de-embedding the parasitic capacitance through the photonic C-V measurement

Hagyoul Bae; Hyunjun Choi; Saeroonter Oh; Dae Hwan Kim; Jonguk Bae; Jaehyeong Kim; Yun Hyeok Kim; Dong Myong Kim

doi:10.1109/LED.2012.2222014

Extraction technique for intrinsic subgap DOS in a-IGZO TFTs by de-embedding the parasitic capacitance through the photonic C-V measurement

Hagyoul Bae
, Hyunjun Choi
, Saeroonter Oh
, Dae Hwan Kim
, Jonguk Bae
, Jaehyeong Kim
, Yun Hyeok Kim
, Dong Myong Kim

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We report a technique for extraction of the intrinsic subgap density of states (g_A,int(E)) by deembedding the parasitic capacitance in amorphous indium-gallium-zinc-oxide TFTs through the optical charge pumping method. As structure-dependent parameters in the proposed extraction technique, the overlap length L_ov between the source/drain (S/D) and the active layer and the parasitic overlap area between the gate and the S/D metal (C _{par}, S}/C_{par, D}) are considered under dark and subbandgap photonic states. We obtained g_A,int(E) as a superposition of the exponential deep and tail states with N_TA,int6.0×10 ¹⁶eV^-1cm^-3, kT_intTA,0.16eV, N _DA,int1.8×10¹⁵eV^-1cm^-3, and k_TDA,int =1.9_eV from samples with various parasitic areas.

Original language	English
Article number	6361260
Pages (from-to)	57-59
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	1
DOIs	https://doi.org/10.1109/LED.2012.2222014
State	Published - 2013
Externally published	Yes

Keywords

Amorphous
extraction
overlap capacitance
parasitic capacitance
parasitic effect
subgap density of states (DOS)
thin-film transistors (TFTs)

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10.1109/LED.2012.2222014

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title = "Extraction technique for intrinsic subgap DOS in a-IGZO TFTs by de-embedding the parasitic capacitance through the photonic C-V measurement",

abstract = "We report a technique for extraction of the intrinsic subgap density of states (gA,int(E)) by deembedding the parasitic capacitance in amorphous indium-gallium-zinc-oxide TFTs through the optical charge pumping method. As structure-dependent parameters in the proposed extraction technique, the overlap length Lov between the source/drain (S/D) and the active layer and the parasitic overlap area between the gate and the S/D metal (C par\}, S/Cpar, D) are considered under dark and subbandgap photonic states. We obtained gA,int(E) as a superposition of the exponential deep and tail states with NTA,int6.0×10 16eV-1cm-3, kTintTA,0.16eV, N DA,int1.8×1015eV-1cm-3, and kTDA,int =1.9eV from samples with various parasitic areas.",

keywords = "Amorphous, extraction, overlap capacitance, parasitic capacitance, parasitic effect, subgap density of states (DOS), thin-film transistors (TFTs)",

author = "Hagyoul Bae and Hyunjun Choi and Saeroonter Oh and Kim, \{Dae Hwan\} and Jonguk Bae and Jaehyeong Kim and Kim, \{Yun Hyeok\} and Kim, \{Dong Myong\}",

year = "2013",

doi = "10.1109/LED.2012.2222014",

language = "English",

volume = "34",

pages = "57--59",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

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TY - JOUR

T1 - Extraction technique for intrinsic subgap DOS in a-IGZO TFTs by de-embedding the parasitic capacitance through the photonic C-V measurement

AU - Bae, Hagyoul

AU - Choi, Hyunjun

AU - Oh, Saeroonter

AU - Kim, Dae Hwan

AU - Bae, Jonguk

AU - Kim, Jaehyeong

AU - Kim, Yun Hyeok

AU - Kim, Dong Myong

PY - 2013

Y1 - 2013

N2 - We report a technique for extraction of the intrinsic subgap density of states (gA,int(E)) by deembedding the parasitic capacitance in amorphous indium-gallium-zinc-oxide TFTs through the optical charge pumping method. As structure-dependent parameters in the proposed extraction technique, the overlap length Lov between the source/drain (S/D) and the active layer and the parasitic overlap area between the gate and the S/D metal (C par}, S/Cpar, D) are considered under dark and subbandgap photonic states. We obtained gA,int(E) as a superposition of the exponential deep and tail states with NTA,int6.0×10 16eV-1cm-3, kTintTA,0.16eV, N DA,int1.8×1015eV-1cm-3, and kTDA,int =1.9eV from samples with various parasitic areas.

AB - We report a technique for extraction of the intrinsic subgap density of states (gA,int(E)) by deembedding the parasitic capacitance in amorphous indium-gallium-zinc-oxide TFTs through the optical charge pumping method. As structure-dependent parameters in the proposed extraction technique, the overlap length Lov between the source/drain (S/D) and the active layer and the parasitic overlap area between the gate and the S/D metal (C par}, S/Cpar, D) are considered under dark and subbandgap photonic states. We obtained gA,int(E) as a superposition of the exponential deep and tail states with NTA,int6.0×10 16eV-1cm-3, kTintTA,0.16eV, N DA,int1.8×1015eV-1cm-3, and kTDA,int =1.9eV from samples with various parasitic areas.

KW - Amorphous

KW - extraction

KW - overlap capacitance

KW - parasitic capacitance

KW - parasitic effect

KW - subgap density of states (DOS)

KW - thin-film transistors (TFTs)

UR - https://www.scopus.com/pages/publications/84871748017

U2 - 10.1109/LED.2012.2222014

DO - 10.1109/LED.2012.2222014

M3 - Article

AN - SCOPUS:84871748017

SN - 0741-3106

VL - 34

SP - 57

EP - 59

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

M1 - 6361260

ER -

Extraction technique for intrinsic subgap DOS in a-IGZO TFTs by de-embedding the parasitic capacitance through the photonic C-V measurement

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Keywords

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