Exploratory combustion synthesis: Amorphous indium yttrium oxide for thin-film transistors

Jonathan W. Hennek; Myung Gil Kim; Mercouri G. Kanatzidis; Antonio Facchetti; Tobin J. Marks

doi:10.1021/ja303589v

Exploratory combustion synthesis: Amorphous indium yttrium oxide for thin-film transistors

Jonathan W. Hennek
, Myung Gil Kim
, Mercouri G. Kanatzidis
, Antonio Facchetti
, Tobin J. Marks

Northwestern University
Polyera Corporation

Research output: Contribution to journal › Article › peer-review

117 Scopus citations

Abstract

We report the implementation of amorphous indium yttrium oxide (a-IYO) as a thin-film transistor (TFT) semiconductor. Amorphous and polycrystalline IYO films were grown via a low-temperature solution process utilizing exothermic "combustion" precursors. Precursor transformation and the IYO films were analyzed by differential thermal analysis, thermogravimetric analysis, X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and optical transmission, which reveal efficient conversion to the metal oxide lattice and smooth, transparent films. a-IYO TFTs fabricated with a hybrid nanodielectric exhibit electron mobilities of 7.3 cm ² V ^-1 s ^-1 (T _anneal = 300 °C) and 5.0 cm ² V ^-1 s ^-1 (T _anneal = 250 °C) for 2 V operation.

Original language	English
Pages (from-to)	9593-9596
Number of pages	4
Journal	Journal of the American Chemical Society
Volume	134
Issue number	23
DOIs	https://doi.org/10.1021/ja303589v
State	Published - 13 Jun 2012
Externally published	Yes

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title = "Exploratory combustion synthesis: Amorphous indium yttrium oxide for thin-film transistors",

abstract = "We report the implementation of amorphous indium yttrium oxide (a-IYO) as a thin-film transistor (TFT) semiconductor. Amorphous and polycrystalline IYO films were grown via a low-temperature solution process utilizing exothermic {"}combustion{"} precursors. Precursor transformation and the IYO films were analyzed by differential thermal analysis, thermogravimetric analysis, X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and optical transmission, which reveal efficient conversion to the metal oxide lattice and smooth, transparent films. a-IYO TFTs fabricated with a hybrid nanodielectric exhibit electron mobilities of 7.3 cm 2 V -1 s -1 (T anneal = 300 °C) and 5.0 cm 2 V -1 s -1 (T anneal = 250 °C) for 2 V operation.",

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doi = "10.1021/ja303589v",

language = "English",

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TY - JOUR

T1 - Exploratory combustion synthesis

T2 - Amorphous indium yttrium oxide for thin-film transistors

AU - Hennek, Jonathan W.

AU - Kim, Myung Gil

AU - Kanatzidis, Mercouri G.

AU - Facchetti, Antonio

AU - Marks, Tobin J.

PY - 2012/6/13

Y1 - 2012/6/13

N2 - We report the implementation of amorphous indium yttrium oxide (a-IYO) as a thin-film transistor (TFT) semiconductor. Amorphous and polycrystalline IYO films were grown via a low-temperature solution process utilizing exothermic "combustion" precursors. Precursor transformation and the IYO films were analyzed by differential thermal analysis, thermogravimetric analysis, X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and optical transmission, which reveal efficient conversion to the metal oxide lattice and smooth, transparent films. a-IYO TFTs fabricated with a hybrid nanodielectric exhibit electron mobilities of 7.3 cm 2 V -1 s -1 (T anneal = 300 °C) and 5.0 cm 2 V -1 s -1 (T anneal = 250 °C) for 2 V operation.

AB - We report the implementation of amorphous indium yttrium oxide (a-IYO) as a thin-film transistor (TFT) semiconductor. Amorphous and polycrystalline IYO films were grown via a low-temperature solution process utilizing exothermic "combustion" precursors. Precursor transformation and the IYO films were analyzed by differential thermal analysis, thermogravimetric analysis, X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and optical transmission, which reveal efficient conversion to the metal oxide lattice and smooth, transparent films. a-IYO TFTs fabricated with a hybrid nanodielectric exhibit electron mobilities of 7.3 cm 2 V -1 s -1 (T anneal = 300 °C) and 5.0 cm 2 V -1 s -1 (T anneal = 250 °C) for 2 V operation.

UR - https://www.scopus.com/pages/publications/84862164372

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DO - 10.1021/ja303589v

M3 - Article

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JF - Journal of the American Chemical Society

IS - 23

ER -

Exploratory combustion synthesis: Amorphous indium yttrium oxide for thin-film transistors

Abstract

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