TY - JOUR
T1 - Exploratory combustion synthesis
T2 - Amorphous indium yttrium oxide for thin-film transistors
AU - Hennek, Jonathan W.
AU - Kim, Myung Gil
AU - Kanatzidis, Mercouri G.
AU - Facchetti, Antonio
AU - Marks, Tobin J.
PY - 2012/6/13
Y1 - 2012/6/13
N2 - We report the implementation of amorphous indium yttrium oxide (a-IYO) as a thin-film transistor (TFT) semiconductor. Amorphous and polycrystalline IYO films were grown via a low-temperature solution process utilizing exothermic "combustion" precursors. Precursor transformation and the IYO films were analyzed by differential thermal analysis, thermogravimetric analysis, X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and optical transmission, which reveal efficient conversion to the metal oxide lattice and smooth, transparent films. a-IYO TFTs fabricated with a hybrid nanodielectric exhibit electron mobilities of 7.3 cm 2 V -1 s -1 (T anneal = 300 °C) and 5.0 cm 2 V -1 s -1 (T anneal = 250 °C) for 2 V operation.
AB - We report the implementation of amorphous indium yttrium oxide (a-IYO) as a thin-film transistor (TFT) semiconductor. Amorphous and polycrystalline IYO films were grown via a low-temperature solution process utilizing exothermic "combustion" precursors. Precursor transformation and the IYO films were analyzed by differential thermal analysis, thermogravimetric analysis, X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, and optical transmission, which reveal efficient conversion to the metal oxide lattice and smooth, transparent films. a-IYO TFTs fabricated with a hybrid nanodielectric exhibit electron mobilities of 7.3 cm 2 V -1 s -1 (T anneal = 300 °C) and 5.0 cm 2 V -1 s -1 (T anneal = 250 °C) for 2 V operation.
UR - https://www.scopus.com/pages/publications/84862164372
U2 - 10.1021/ja303589v
DO - 10.1021/ja303589v
M3 - Article
AN - SCOPUS:84862164372
SN - 0002-7863
VL - 134
SP - 9593
EP - 9596
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
IS - 23
ER -