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Experimental Validation of RC Snubber Circuit for GaN-Based Battery Formation Device With Switching Noise Coupling Problem

  • Jong Hun Lim
  • , Je Yeong Lim
  • , Dong Hwan Kim
  • , Kiseok Jeong
  • , Taemin Jang
  • , Byoung Kuk Lee
  • Sungkyunkwan University
  • Ltd.

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper proposes a method for implementing the design of a snubber circuit to address the switching noise coupling issue in Gallium Nitride (GaN)-based battery formation devices. The proposed snubber design serves as process to avoid voltage spike resulting from the parasitic inductance within the PCB loop, preventing its interference with the interleave switch and mitigating the risk of overvoltage in GaN switches. Utilizing the proposed snubber circuit design, a comparative experiment is conducted to demonstrate the improvements before and after snubber circuit design. The validation result shows enhancements for 44.6% switching noise, overvoltage, and ringing reduction.

Original languageEnglish
Title of host publicationCEFC 2024 - 21st IEEE Biennial Conference on Electromagnetic Field Computation
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9798350348958
DOIs
StatePublished - 2024
Externally publishedYes
Event21st IEEE Biennial Conference on Electromagnetic Field Computation, CEFC 2024 - Jeju, Korea, Republic of
Duration: 2 Jun 20245 Jun 2024

Publication series

NameCEFC 2024 - 21st IEEE Biennial Conference on Electromagnetic Field Computation

Conference

Conference21st IEEE Biennial Conference on Electromagnetic Field Computation, CEFC 2024
Country/TerritoryKorea, Republic of
CityJeju
Period2/06/245/06/24

Keywords

  • GaN
  • Noise coupling
  • RC snubber
  • Voltage spike

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