Experimental investigation of quasi-ballistic carrier transport characteristics in 10-nm scale MOSFETs

Jaehong Lee; Jongwook Jeon; Junsoo Kim; Byung Gook Park; Jong Duk Lee; Hyungcheol Shin

doi:10.1109/TNANO.2010.2091421

Experimental investigation of quasi-ballistic carrier transport characteristics in 10-nm scale MOSFETs

Jaehong Lee
, Jongwook Jeon
, Junsoo Kim
, Byung Gook Park
, Jong Duk Lee
, Hyungcheol Shin

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this paper, experimental investigation on quasi-ballistic carrier transportation is carried out in 10-nm scale MOSFETs. In order to extract some ballistic parameters, the channel inversion charge by the RF C-V technique is quantitatively calculated. Also, the effective channel length and the carrier mobility are carefully analyzed to calculate the mean free path in the channel region. It is found that in case of ultrashort-channel devices, carriers in the channel region are scattered few times. Especially, the shortest device has 11 nm effective channel length, and it showed almost 50 of ballistic efficiency. From this result, it is confirmed that planar MOSFETs are also operated in the quasi-ballistic region as its effective channel length approaches near 10 nm.

Original language	English
Article number	5624636
Pages (from-to)	975-979
Number of pages	5
Journal	IEEE Transactions on Nanotechnology
Volume	10
Issue number	5
DOIs	https://doi.org/10.1109/TNANO.2010.2091421
State	Published - Sep 2011
Externally published	Yes

Keywords

Ballistic efficiency (BE)
channel backscattering coefficient
channel scattering
quasi-ballistic transport

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10.1109/TNANO.2010.2091421

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title = "Experimental investigation of quasi-ballistic carrier transport characteristics in 10-nm scale MOSFETs",

abstract = "In this paper, experimental investigation on quasi-ballistic carrier transportation is carried out in 10-nm scale MOSFETs. In order to extract some ballistic parameters, the channel inversion charge by the RF C-V technique is quantitatively calculated. Also, the effective channel length and the carrier mobility are carefully analyzed to calculate the mean free path in the channel region. It is found that in case of ultrashort-channel devices, carriers in the channel region are scattered few times. Especially, the shortest device has 11 nm effective channel length, and it showed almost 50 of ballistic efficiency. From this result, it is confirmed that planar MOSFETs are also operated in the quasi-ballistic region as its effective channel length approaches near 10 nm.",

keywords = "Ballistic efficiency (BE), channel backscattering coefficient, channel scattering, quasi-ballistic transport",

author = "Jaehong Lee and Jongwook Jeon and Junsoo Kim and Park, \{Byung Gook\} and Lee, \{Jong Duk\} and Hyungcheol Shin",

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AU - Lee, Jaehong

AU - Jeon, Jongwook

AU - Kim, Junsoo

AU - Park, Byung Gook

AU - Lee, Jong Duk

AU - Shin, Hyungcheol

PY - 2011/9

Y1 - 2011/9

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AB - In this paper, experimental investigation on quasi-ballistic carrier transportation is carried out in 10-nm scale MOSFETs. In order to extract some ballistic parameters, the channel inversion charge by the RF C-V technique is quantitatively calculated. Also, the effective channel length and the carrier mobility are carefully analyzed to calculate the mean free path in the channel region. It is found that in case of ultrashort-channel devices, carriers in the channel region are scattered few times. Especially, the shortest device has 11 nm effective channel length, and it showed almost 50 of ballistic efficiency. From this result, it is confirmed that planar MOSFETs are also operated in the quasi-ballistic region as its effective channel length approaches near 10 nm.

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KW - channel backscattering coefficient

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Experimental investigation of quasi-ballistic carrier transport characteristics in 10-nm scale MOSFETs

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Keywords

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