Experimental evidence for Drude-Boltzmann-like transport in a two-dimensional electron gas in an AlGaN/GaN heterostructure

AlGaN/GaN heterostructures have been attracting a great deal of interest because of their great potential applications as light-emitting-diodes, high-electron-mobility transistors (HEMTs), and detectors operating in the visible-to-ultraviolet range. The performances of these devices are governed by the electronic properties of the two-dimensional electron gas (2DEG) formed at the interface of AlGaN/GaN heterostructure. In this work, we report transport measurements for an AlGaN/GaN 2DEG as functions of the magnetic field B over a wide range of temperature (4.682 K ≤ T ≤ 80 K). At the highest measurement temperature of 80 K, the longitudinal resistance is nominally B-independent, compelling experimental evidence for Drude-Boltzmann-like transport in a 2D system.