Experimental decomposition of the positive bias temperature stress-induced instability in self-aligned coplanar InGaZnO thin-film transistors and its modeling based on the multiple stretched-exponential functions

  • Dae Hwan Kim
  • , Sungju Choi
  • , Juntae Jang
  • , Hara Kang
  • , Dong Myong Kim
  • , Sung Jin Choi
  • , Yong Sung Kim
  • , Saeroonter Oh
  • , Ju Heyuck Baeck
  • , Jong Uk Bae
  • , Kwon Shik Park
  • , Soo Young Yoon
  • , In Byeong Kang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Decomposition of the positive gate-bias temperature stress (PBTS)-induced instability into contributions of distinct mechanisms is experimentally demonstrated in top-gate self-aligned coplanar amorphous InGaZnO thin-film transistors and validated by reproducing the PBTS time-evolution of l-V characteristics through the TCAD simulation into which the extracted density-of-states and charge trapping are incorporated.

Original languageEnglish
Title of host publicationDigest of Technical Papers - SID International Symposium
PublisherBlackwell Publishing Ltd
Pages298-301
Number of pages4
Edition1
ISBN (Electronic)9781510848757, 9781510848757, 9781510848757
DOIs
StatePublished - 2017
Externally publishedYes
EventSID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, United States
Duration: 21 May 201726 May 2017

Publication series

NameDigest of Technical Papers - SID International Symposium
Number1
Volume48
ISSN (Print)0097-966X
ISSN (Electronic)2168-0159

Conference

ConferenceSID Symposium, Seminar, and Exhibition 2017, Display Week 2017
Country/TerritoryUnited States
CityLos Angeles
Period21/05/1726/05/17

Keywords

  • Amorphous InGaZno thin-film transistors
  • Experimental decomposition of positive-bias temperature stress instability
  • Top-gate self-aligned coplanar structure

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