Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers

Hyun Yong Yu; Enes Battal; Ali Kemal Okyay; Jaewoo Shim; Jin Hong Park; Jung Woo Baek; Krishna C. Saraswat

doi:10.1016/j.cap.2013.02.021

Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers

Hyun Yong Yu
, Enes Battal
, Ali Kemal Okyay
, Jaewoo Shim
, Jin Hong Park
, Jung Woo Baek
, Krishna C. Saraswat

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10^-5 cm²/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices.

Original language	English
Pages (from-to)	1060-1063
Number of pages	4
Journal	Current Applied Physics
Volume	13
Issue number	6
DOIs	https://doi.org/10.1016/j.cap.2013.02.021
State	Published - Aug 2013

Keywords

Activation energy
Diffusivity
Germanium
In-situ
Phosphorus

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10.1016/j.cap.2013.02.021

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@article{d2387e397eff4115ac398df99bcce269,

title = "Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers",

abstract = "We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10-5 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices.",

keywords = "Activation energy, Diffusivity, Germanium, In-situ, Phosphorus",

author = "Yu, \{Hyun Yong\} and Enes Battal and Okyay, \{Ali Kemal\} and Jaewoo Shim and Park, \{Jin Hong\} and Baek, \{Jung Woo\} and Saraswat, \{Krishna C.\}",

year = "2013",

month = aug,

doi = "10.1016/j.cap.2013.02.021",

language = "English",

volume = "13",

pages = "1060--1063",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers

AU - Yu, Hyun Yong

AU - Battal, Enes

AU - Okyay, Ali Kemal

AU - Shim, Jaewoo

AU - Park, Jin Hong

AU - Baek, Jung Woo

AU - Saraswat, Krishna C.

PY - 2013/8

Y1 - 2013/8

N2 - We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10-5 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices.

AB - We investigate phosphorus in-situ doping characteristics in germanium (Ge) during epitaxial growth by spreading resistance profiling analysis. In addition, we present an accurate model for the kinetics of the diffusion in the in-situ process, modeling combined growth and diffusion events. The activation energy and pre-exponential factor for phosphorus (P) diffusion are determined to be 1.91 eV and 3.75 × 10-5 cm2/s. These results show that P in-situ doping diffusivity is low enough to form shallow junctions for high performance Ge devices.

KW - Activation energy

KW - Diffusivity

KW - Germanium

KW - In-situ

KW - Phosphorus

UR - https://www.scopus.com/pages/publications/84877582836

U2 - 10.1016/j.cap.2013.02.021

DO - 10.1016/j.cap.2013.02.021

M3 - Article

AN - SCOPUS:84877582836

SN - 1567-1739

VL - 13

SP - 1060

EP - 1063

JO - Current Applied Physics

JF - Current Applied Physics

IS - 6

ER -

Experimental and theoretical investigation of phosphorus in-situ doping of germanium epitaxial layers

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Keywords

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