Exciton recombination in ZnO nanorods grown on GaN/sapphire template

S. K. Mohanta; S. Tripathy; X. H. Zhang; D. C. Kim; C. B. Soh; A. M. Yong; W. Liu; H. K. Cho

doi:10.1063/1.3074366

Exciton recombination in ZnO nanorods grown on GaN/sapphire template

S. K. Mohanta
, S. Tripathy
, X. H. Zhang
, D. C. Kim
, C. B. Soh
, A. M. Yong
, W. Liu
, H. K. Cho

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

The authors have employed variable temperature photoluminescence (PL) and time-resolved PL spectroscopy to probe the exciton recombination in high density and vertically aligned ZnO nanorods grown on p -type GaN/sapphire template. The low-temperature PL characterizes the dominant near-band-edge excitonic emissions from such nanorod arrays. At 4.3 K, a PL decay time of 432 ps reveals improved crystalline quality. The PL decay time shows irregular behavior due to different types of excitonic transitions dominating the PL spectra at different temperatures and a competitive effect of radiative recombination and nonradiative relaxation processes.

Original language	English
Article number	041901
Journal	Applied Physics Letters
Volume	94
Issue number	4
DOIs	https://doi.org/10.1063/1.3074366
State	Published - 2009

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@article{32aaaeda9afe4894ac37881956c39d17,

title = "Exciton recombination in ZnO nanorods grown on GaN/sapphire template",

abstract = "The authors have employed variable temperature photoluminescence (PL) and time-resolved PL spectroscopy to probe the exciton recombination in high density and vertically aligned ZnO nanorods grown on p -type GaN/sapphire template. The low-temperature PL characterizes the dominant near-band-edge excitonic emissions from such nanorod arrays. At 4.3 K, a PL decay time of 432 ps reveals improved crystalline quality. The PL decay time shows irregular behavior due to different types of excitonic transitions dominating the PL spectra at different temperatures and a competitive effect of radiative recombination and nonradiative relaxation processes.",

author = "Mohanta, \{S. K.\} and S. Tripathy and Zhang, \{X. H.\} and Kim, \{D. C.\} and Soh, \{C. B.\} and Yong, \{A. M.\} and W. Liu and Cho, \{H. K.\}",

year = "2009",

doi = "10.1063/1.3074366",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Exciton recombination in ZnO nanorods grown on GaN/sapphire template

AU - Mohanta, S. K.

AU - Tripathy, S.

AU - Zhang, X. H.

AU - Kim, D. C.

AU - Soh, C. B.

AU - Yong, A. M.

AU - Liu, W.

AU - Cho, H. K.

PY - 2009

Y1 - 2009

N2 - The authors have employed variable temperature photoluminescence (PL) and time-resolved PL spectroscopy to probe the exciton recombination in high density and vertically aligned ZnO nanorods grown on p -type GaN/sapphire template. The low-temperature PL characterizes the dominant near-band-edge excitonic emissions from such nanorod arrays. At 4.3 K, a PL decay time of 432 ps reveals improved crystalline quality. The PL decay time shows irregular behavior due to different types of excitonic transitions dominating the PL spectra at different temperatures and a competitive effect of radiative recombination and nonradiative relaxation processes.

AB - The authors have employed variable temperature photoluminescence (PL) and time-resolved PL spectroscopy to probe the exciton recombination in high density and vertically aligned ZnO nanorods grown on p -type GaN/sapphire template. The low-temperature PL characterizes the dominant near-band-edge excitonic emissions from such nanorod arrays. At 4.3 K, a PL decay time of 432 ps reveals improved crystalline quality. The PL decay time shows irregular behavior due to different types of excitonic transitions dominating the PL spectra at different temperatures and a competitive effect of radiative recombination and nonradiative relaxation processes.

UR - https://www.scopus.com/pages/publications/59349094979

U2 - 10.1063/1.3074366

DO - 10.1063/1.3074366

M3 - Article

AN - SCOPUS:59349094979

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 041901

ER -

Exciton recombination in ZnO nanorods grown on GaN/sapphire template

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