Exchange-enhanced Landé g-factor, effective disorder and collapse of spin-splitting in a two-dimensional GaAs electron system

  • Tsai Yu Huang
  • , Yu Ming Cheng
  • , C. T. Liang
  • , Gil Ho Kim
  • , J. Y. Leem

Research output: Contribution to journalConference articlepeer-review

Abstract

We have measured the low-temperature transport properties of front-gated GaAs/Al0.33Ga0.67As heterostructures. Collapse of spin-splitting and an enhanced Landé |g|-factor at Landau level filling factors both ν=3 and 1 are observed. Our experimental results show direct evidence that the electron-electron interactions are stronger at ν=3 than those at ν=1 over approximately the same perpendicular magnetic field range.

Original languageEnglish
Pages (from-to)424-427
Number of pages4
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume12
Issue number1-4
DOIs
StatePublished - Jan 2002
Externally publishedYes
Event14th International Conference on the - Prague, Czech Republic
Duration: 30 Jul 20013 Aug 2001

Keywords

  • g-Factor
  • GaAs
  • Spin

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