Abstract
We have measured the low-temperature transport properties of front-gated GaAs/Al0.33Ga0.67As heterostructures. Collapse of spin-splitting and an enhanced Landé |g|-factor at Landau level filling factors both ν=3 and 1 are observed. Our experimental results show direct evidence that the electron-electron interactions are stronger at ν=3 than those at ν=1 over approximately the same perpendicular magnetic field range.
| Original language | English |
|---|---|
| Pages (from-to) | 424-427 |
| Number of pages | 4 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 12 |
| Issue number | 1-4 |
| DOIs | |
| State | Published - Jan 2002 |
| Externally published | Yes |
| Event | 14th International Conference on the - Prague, Czech Republic Duration: 30 Jul 2001 → 3 Aug 2001 |
Keywords
- g-Factor
- GaAs
- Spin
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