Abstract
Oxide semiconductors are of particular interest in the field of integrated electronics due to their large-area fabrication, high uniformity, and superior performance. Here, we report an exceptionally sensitive photo-induced inverter device with high linearity based on the unipolar n-type channel material amorphous silicon indium zinc oxide (a-SIZO). The field-effect transistor (FET) based on a-SIZO exhibits maximum mobility of 9.8 cm2/Vs at text{V}-{mathrm{ D}} of 5 V, high on/off ratio of sim 10 {6} , and stable threshold voltage ( text{V}-{mathrm{ Th}} ) of -0.35 V. Additionally, the optical properties of the proposed FET include excellent text{V}-{mathrm{ Th}} shift and photocurrent ( text{I}-{mathrm{ photo}} ) with high linearity under various red-light illumination. The proposed enhancement-load type inverter device shows reliable electrical and optical characteristics with an inverter gain of 0.7 at text{V}-{mathrm{ DD}} of 1 V and linear photo-response in terms of inverter gain and voltage shift, demonstrating promising potential in the field of integrated electronics for optoelectronic applications.
| Original language | English |
|---|---|
| Article number | 9312158 |
| Pages (from-to) | 180-186 |
| Number of pages | 7 |
| Journal | IEEE Journal of the Electron Devices Society |
| Volume | 9 |
| DOIs | |
| State | Published - 2021 |
Keywords
- amorphous silicon indium zinc oxide (a-SIZO)
- field-effect transistor (FET)
- photo-induced inverter
- phototransistor
- Unipolar inverter
