Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxides

Kyung Jean Yoon; Seul Ji Song; Jun Yeong Seok; Jung Ho Yoon; Tae Hyung Park; Dae Eun Kwon; Cheol Seong Hwang

doi:10.1039/c3nr05426h

Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxides

Kyung Jean Yoon, Seul Ji Song, Jun Yeong Seok, Jung Ho Yoon, Tae Hyung Park, Dae Eun Kwon, Cheol Seong Hwang

Seoul National University

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

Ultimate control of the defect distribution and local conduction path in a bipolar resistive switching (BRS) Pt/TiO₂/Pt sample, which was in a unipolar reset state, is provided by means of voltage pulsing and the resulting time-transient current analysis. The limited amount of oxygen vacancies in this system allowed reversibly switching-diode-like current-voltage curves, which was also confirmed in another Magnéli-phase-containing Pt/WO₃/Pt sample. Such careful control of the defect distribution allowed the achievement of a complementary resistive switching (CRS) curve even from a single switching layer. The unlimited vacancy source in the Pt/TiO₂/TiO _2-x/Pt sample did not allow the switching-diode type and the CRS behavior. The data retention of the on-state in the BRS was critically dependent on the shape of the rejuvenated conduction channel. The required time to lead to the rejuvenation of the conducting channel was ∼70-100 ns when the threshold voltage for the BRS set of ∼-1 V was applied.

Original language	English
Pages (from-to)	2161-2169
Number of pages	9
Journal	Nanoscale
Volume	6
Issue number	4
DOIs	https://doi.org/10.1039/c3nr05426h
State	Published - 21 Feb 2014
Externally published	Yes

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title = "Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxides",

abstract = "Ultimate control of the defect distribution and local conduction path in a bipolar resistive switching (BRS) Pt/TiO2/Pt sample, which was in a unipolar reset state, is provided by means of voltage pulsing and the resulting time-transient current analysis. The limited amount of oxygen vacancies in this system allowed reversibly switching-diode-like current-voltage curves, which was also confirmed in another Magn{\'e}li-phase-containing Pt/WO3/Pt sample. Such careful control of the defect distribution allowed the achievement of a complementary resistive switching (CRS) curve even from a single switching layer. The unlimited vacancy source in the Pt/TiO2/TiO 2-x/Pt sample did not allow the switching-diode type and the CRS behavior. The data retention of the on-state in the BRS was critically dependent on the shape of the rejuvenated conduction channel. The required time to lead to the rejuvenation of the conducting channel was ∼70-100 ns when the threshold voltage for the BRS set of ∼-1 V was applied.",

author = "Yoon, \{Kyung Jean\} and Song, \{Seul Ji\} and Seok, \{Jun Yeong\} and Yoon, \{Jung Ho\} and Park, \{Tae Hyung\} and Kwon, \{Dae Eun\} and Hwang, \{Cheol Seong\}",

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T1 - Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxides

AU - Yoon, Kyung Jean

AU - Song, Seul Ji

AU - Seok, Jun Yeong

AU - Yoon, Jung Ho

AU - Park, Tae Hyung

AU - Kwon, Dae Eun

AU - Hwang, Cheol Seong

PY - 2014/2/21

Y1 - 2014/2/21

N2 - Ultimate control of the defect distribution and local conduction path in a bipolar resistive switching (BRS) Pt/TiO2/Pt sample, which was in a unipolar reset state, is provided by means of voltage pulsing and the resulting time-transient current analysis. The limited amount of oxygen vacancies in this system allowed reversibly switching-diode-like current-voltage curves, which was also confirmed in another Magnéli-phase-containing Pt/WO3/Pt sample. Such careful control of the defect distribution allowed the achievement of a complementary resistive switching (CRS) curve even from a single switching layer. The unlimited vacancy source in the Pt/TiO2/TiO 2-x/Pt sample did not allow the switching-diode type and the CRS behavior. The data retention of the on-state in the BRS was critically dependent on the shape of the rejuvenated conduction channel. The required time to lead to the rejuvenation of the conducting channel was ∼70-100 ns when the threshold voltage for the BRS set of ∼-1 V was applied.

AB - Ultimate control of the defect distribution and local conduction path in a bipolar resistive switching (BRS) Pt/TiO2/Pt sample, which was in a unipolar reset state, is provided by means of voltage pulsing and the resulting time-transient current analysis. The limited amount of oxygen vacancies in this system allowed reversibly switching-diode-like current-voltage curves, which was also confirmed in another Magnéli-phase-containing Pt/WO3/Pt sample. Such careful control of the defect distribution allowed the achievement of a complementary resistive switching (CRS) curve even from a single switching layer. The unlimited vacancy source in the Pt/TiO2/TiO 2-x/Pt sample did not allow the switching-diode type and the CRS behavior. The data retention of the on-state in the BRS was critically dependent on the shape of the rejuvenated conduction channel. The required time to lead to the rejuvenation of the conducting channel was ∼70-100 ns when the threshold voltage for the BRS set of ∼-1 V was applied.

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DO - 10.1039/c3nr05426h

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AN - SCOPUS:84893281745

SN - 2040-3364

VL - 6

SP - 2161

EP - 2169

JO - Nanoscale

JF - Nanoscale

IS - 4

ER -

Evolution of the shape of the conducting channel in complementary resistive switching transition metal oxides

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