Etching of platinum thin films by high density Ar/Cl2/HBr plasma

C. I. Kim; N. H. Kim; E. G. Chang; K. H. Kwon; G. Y. Yeom; Y. J. Seo

Etching of platinum thin films by high density Ar/Cl₂/HBr plasma

C. I. Kim
, N. H. Kim
, E. G. Chang
, K. H. Kwon
, G. Y. Yeom
, Y. J. Seo

Chung-Ang University

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Platinum is widely researched as the electrode material for capacitor of high dielectric films in dynamic random access memory (DRAM) application. However, the dry etching of Pt is difficult because of its chemical stability. So, the dry etching of Pt remains at the preliminary work. In this work, Pt etching mechanism was investigated by using inductive coupled plasma (ICP) with Ar/Cl₂/HBr gas. The peaks were found due to brominated Pt as well as chlorinated Pt in the XPS (X-ray photoelectron spectroscopy) narrow scan. Ion bombardment effects on the etched surface decreased with increasing HBr/(HBr+Cl₂) gas mixing ratio. The maximum etch rate of Pt was 105 nm/min at the HBr/(HBr+Cl₂) ratio of 0. And selectivity to SiO₂ was good in all samples with various HBr/(HBr+Cl₂) gas mixing ratios. These results are consistent with XPS and OES (optical emission spectrometry) and single Langmuir probe.

Original language	English
Pages (from-to)	357-362
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	514
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA Duration: 15 Apr 1998 → 16 Apr 1998

Cite this

@article{21efb96246f34f52bb0823de911b5c49,

title = "Etching of platinum thin films by high density Ar/Cl2/HBr plasma",

abstract = "Platinum is widely researched as the electrode material for capacitor of high dielectric films in dynamic random access memory (DRAM) application. However, the dry etching of Pt is difficult because of its chemical stability. So, the dry etching of Pt remains at the preliminary work. In this work, Pt etching mechanism was investigated by using inductive coupled plasma (ICP) with Ar/Cl2/HBr gas. The peaks were found due to brominated Pt as well as chlorinated Pt in the XPS (X-ray photoelectron spectroscopy) narrow scan. Ion bombardment effects on the etched surface decreased with increasing HBr/(HBr+Cl2) gas mixing ratio. The maximum etch rate of Pt was 105 nm/min at the HBr/(HBr+Cl2) ratio of 0. And selectivity to SiO2 was good in all samples with various HBr/(HBr+Cl2) gas mixing ratios. These results are consistent with XPS and OES (optical emission spectrometry) and single Langmuir probe.",

author = "Kim, \{C. I.\} and Kim, \{N. H.\} and Chang, \{E. G.\} and Kwon, \{K. H.\} and Yeom, \{G. Y.\} and Seo, \{Y. J.\}",

year = "1998",

language = "English",

volume = "514",

pages = "357--362",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Spring Symposium ; Conference date: 15-04-1998 Through 16-04-1998",

}

TY - JOUR

T1 - Etching of platinum thin films by high density Ar/Cl2/HBr plasma

AU - Kim, C. I.

AU - Kim, N. H.

AU - Chang, E. G.

AU - Kwon, K. H.

AU - Yeom, G. Y.

AU - Seo, Y. J.

PY - 1998

Y1 - 1998

N2 - Platinum is widely researched as the electrode material for capacitor of high dielectric films in dynamic random access memory (DRAM) application. However, the dry etching of Pt is difficult because of its chemical stability. So, the dry etching of Pt remains at the preliminary work. In this work, Pt etching mechanism was investigated by using inductive coupled plasma (ICP) with Ar/Cl2/HBr gas. The peaks were found due to brominated Pt as well as chlorinated Pt in the XPS (X-ray photoelectron spectroscopy) narrow scan. Ion bombardment effects on the etched surface decreased with increasing HBr/(HBr+Cl2) gas mixing ratio. The maximum etch rate of Pt was 105 nm/min at the HBr/(HBr+Cl2) ratio of 0. And selectivity to SiO2 was good in all samples with various HBr/(HBr+Cl2) gas mixing ratios. These results are consistent with XPS and OES (optical emission spectrometry) and single Langmuir probe.

AB - Platinum is widely researched as the electrode material for capacitor of high dielectric films in dynamic random access memory (DRAM) application. However, the dry etching of Pt is difficult because of its chemical stability. So, the dry etching of Pt remains at the preliminary work. In this work, Pt etching mechanism was investigated by using inductive coupled plasma (ICP) with Ar/Cl2/HBr gas. The peaks were found due to brominated Pt as well as chlorinated Pt in the XPS (X-ray photoelectron spectroscopy) narrow scan. Ion bombardment effects on the etched surface decreased with increasing HBr/(HBr+Cl2) gas mixing ratio. The maximum etch rate of Pt was 105 nm/min at the HBr/(HBr+Cl2) ratio of 0. And selectivity to SiO2 was good in all samples with various HBr/(HBr+Cl2) gas mixing ratios. These results are consistent with XPS and OES (optical emission spectrometry) and single Langmuir probe.

UR - https://www.scopus.com/pages/publications/0032304231

M3 - Conference article

AN - SCOPUS:0032304231

SN - 0272-9172

VL - 514

SP - 357

EP - 362

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Spring Symposium

Y2 - 15 April 1998 through 16 April 1998

ER -

Etching of platinum thin films by high density Ar/Cl₂/HBr plasma

Abstract

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