Etching mechanisms of (In, Ga, Zn)O thin films in CF4/Ar/O2 inductively coupled plasma

Kwangsoo Kim; Alexander Efremov; Junmyung Lee; Kwang Ho Kwon; Geun Young Yeom

doi:10.1116/1.4913735

Etching mechanisms of (In, Ga, Zn)O thin films in CF₄/Ar/O₂ inductively coupled plasma

Kwangsoo Kim
, Alexander Efremov
, Junmyung Lee
, Kwang Ho Kwon
, Geun Young Yeom

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The authors investigated the etching characteristics and mechanisms of (In, Ga, Zn)O (IGZO) thin films in CF₄/Ar/O₂ inductively coupled plasmas. The etching rates of IGZO as well as the IGZO/SiO₂ and IGZO/Al₂O₃ etching selectivities were measured as functions of O₂ content in a feed gas (0%-50%) and gas pressure (p = 4-10 mTorr) at fixed input power (Winp = 700 W) and bias power (Wdc = 200 W). It was found that the IGZO etching rate decreases monotonically toward O₂ rich plasma but exhibits a maximum under gas pressure conditions. The zero-dimensional plasma model with Langmuir probe diagnostics data provided the information on plasma parameters and densities of plasma active species. The model-based analysis shows the dominance of the ion-flux-limited etching regime at p ≥ 6 mTorr as well as the noticeable influence of CF_x radicals on the overall etching kinetics.

Original language	English
Article number	031601
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	33
Issue number	3
DOIs	https://doi.org/10.1116/1.4913735
State	Published - 1 May 2015

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title = "Etching mechanisms of (In, Ga, Zn)O thin films in CF4/Ar/O2 inductively coupled plasma",

abstract = "The authors investigated the etching characteristics and mechanisms of (In, Ga, Zn)O (IGZO) thin films in CF4/Ar/O2 inductively coupled plasmas. The etching rates of IGZO as well as the IGZO/SiO2 and IGZO/Al2O3 etching selectivities were measured as functions of O2 content in a feed gas (0\%-50\%) and gas pressure (p = 4-10 mTorr) at fixed input power (Winp = 700 W) and bias power (Wdc = 200 W). It was found that the IGZO etching rate decreases monotonically toward O2 rich plasma but exhibits a maximum under gas pressure conditions. The zero-dimensional plasma model with Langmuir probe diagnostics data provided the information on plasma parameters and densities of plasma active species. The model-based analysis shows the dominance of the ion-flux-limited etching regime at p ≥ 6 mTorr as well as the noticeable influence of CFx radicals on the overall etching kinetics.",

author = "Kwangsoo Kim and Alexander Efremov and Junmyung Lee and Kwon, \{Kwang Ho\} and Yeom, \{Geun Young\}",

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doi = "10.1116/1.4913735",

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T1 - Etching mechanisms of (In, Ga, Zn)O thin films in CF4/Ar/O2 inductively coupled plasma

AU - Kim, Kwangsoo

AU - Efremov, Alexander

AU - Lee, Junmyung

AU - Kwon, Kwang Ho

AU - Yeom, Geun Young

PY - 2015/5/1

Y1 - 2015/5/1

N2 - The authors investigated the etching characteristics and mechanisms of (In, Ga, Zn)O (IGZO) thin films in CF4/Ar/O2 inductively coupled plasmas. The etching rates of IGZO as well as the IGZO/SiO2 and IGZO/Al2O3 etching selectivities were measured as functions of O2 content in a feed gas (0%-50%) and gas pressure (p = 4-10 mTorr) at fixed input power (Winp = 700 W) and bias power (Wdc = 200 W). It was found that the IGZO etching rate decreases monotonically toward O2 rich plasma but exhibits a maximum under gas pressure conditions. The zero-dimensional plasma model with Langmuir probe diagnostics data provided the information on plasma parameters and densities of plasma active species. The model-based analysis shows the dominance of the ion-flux-limited etching regime at p ≥ 6 mTorr as well as the noticeable influence of CFx radicals on the overall etching kinetics.

AB - The authors investigated the etching characteristics and mechanisms of (In, Ga, Zn)O (IGZO) thin films in CF4/Ar/O2 inductively coupled plasmas. The etching rates of IGZO as well as the IGZO/SiO2 and IGZO/Al2O3 etching selectivities were measured as functions of O2 content in a feed gas (0%-50%) and gas pressure (p = 4-10 mTorr) at fixed input power (Winp = 700 W) and bias power (Wdc = 200 W). It was found that the IGZO etching rate decreases monotonically toward O2 rich plasma but exhibits a maximum under gas pressure conditions. The zero-dimensional plasma model with Langmuir probe diagnostics data provided the information on plasma parameters and densities of plasma active species. The model-based analysis shows the dominance of the ion-flux-limited etching regime at p ≥ 6 mTorr as well as the noticeable influence of CFx radicals on the overall etching kinetics.

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DO - 10.1116/1.4913735

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M1 - 031601

ER -

Etching mechanisms of (In, Ga, Zn)O thin films in CF₄/Ar/O₂ inductively coupled plasma

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