Etching chemistry of benzocyclobutene (BCB) low-k dielectric films in F2+O2 and Cl2+O2 high density plasmas

Steven A. Vitale; Heeyeop Chae; Herbert H. Sawin

doi:10.1116/1.1310655

Etching chemistry of benzocyclobutene (BCB) low-k dielectric films in F₂+O₂ and Cl₂+O₂ high density plasmas

Steven A. Vitale
, Heeyeop Chae
, Herbert H. Sawin

Massachusetts Institute of Technology

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

The plasma chemistry and surface chemistry associated with the BCB etching, to develop a model of the etching mechanism were studied in a high density plasma etcher using F₂+O₂ and Cl₂+O₂ plasmas. Based on mass spectrometer and Langmuir probe measurements, the ion flux to the wafer in F₂+O₂ and Cl₂+O₂ was measured.

Original language	English
Pages (from-to)	2770-2778
Number of pages	9
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	18
Issue number	6
DOIs	https://doi.org/10.1116/1.1310655
State	Published - Nov 2000
Externally published	Yes

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title = "Etching chemistry of benzocyclobutene (BCB) low-k dielectric films in F2+O2 and Cl2+O2 high density plasmas",

abstract = "The plasma chemistry and surface chemistry associated with the BCB etching, to develop a model of the etching mechanism were studied in a high density plasma etcher using F2+O2 and Cl2+O2 plasmas. Based on mass spectrometer and Langmuir probe measurements, the ion flux to the wafer in F2+O2 and Cl2+O2 was measured.",

author = "Vitale, \{Steven A.\} and Heeyeop Chae and Sawin, \{Herbert H.\}",

year = "2000",

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T1 - Etching chemistry of benzocyclobutene (BCB) low-k dielectric films in F2+O2 and Cl2+O2 high density plasmas

AU - Vitale, Steven A.

AU - Chae, Heeyeop

AU - Sawin, Herbert H.

PY - 2000/11

Y1 - 2000/11

N2 - The plasma chemistry and surface chemistry associated with the BCB etching, to develop a model of the etching mechanism were studied in a high density plasma etcher using F2+O2 and Cl2+O2 plasmas. Based on mass spectrometer and Langmuir probe measurements, the ion flux to the wafer in F2+O2 and Cl2+O2 was measured.

AB - The plasma chemistry and surface chemistry associated with the BCB etching, to develop a model of the etching mechanism were studied in a high density plasma etcher using F2+O2 and Cl2+O2 plasmas. Based on mass spectrometer and Langmuir probe measurements, the ion flux to the wafer in F2+O2 and Cl2+O2 was measured.

UR - https://www.scopus.com/pages/publications/0034315725

U2 - 10.1116/1.1310655

DO - 10.1116/1.1310655

M3 - Article

AN - SCOPUS:0034315725

SN - 0734-2101

VL - 18

SP - 2770

EP - 2778

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 6

ER -

Etching chemistry of benzocyclobutene (BCB) low-k dielectric films in F₂+O₂ and Cl₂+O₂ high density plasmas

Abstract

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