@inproceedings{937d19f6472d4aec9e99970d0fea8921,
title = "Etching characteristics of TaN/HfO2 structure in Cl 2/Ar and SF6/Cl2/Ar inductively coupled plasma",
abstract = "Plasma etching characteristics of TaN/HfO2 structure in Cl 2/Ar and SF6/Cl2/Ar were systematically investigated using inductively coupled plasma. Etching experiments were conducted in a modified 8-inch commercial ICP etcher having a 3.5 turn spiral copper coil on the top of chamber separated by a quartz window and pumped by a turbo pump backed by rotary pump. The etch rates of TaN to HfO2 were shown as a function of the Cl2/(Ar+Cl2) gas mixing ratio. It was found that above 500W ICP power, the etch rates of HfO2 decreased when increasing the ICP up to 700W.",
author = "Shin, \{M. H.\} and Na, \{S. W.\} and Lee, \{N. E.\} and Kim, \{J. Y.\}",
year = "2004",
language = "English",
isbn = "4990247205",
series = "Digest of Papers - Microprocesses and Nanotechnology 2004",
pages = "278--279",
booktitle = "Digest of Papers - Microprocesses and Nanotechnology 2004",
note = "2004 International Microprocesses and Nanotechnology Conference ; Conference date: 26-10-2004 Through 29-10-2004",
}