@inproceedings{6017e759e4be49cfbe09968185cfa373,
title = "Etching characteristics of Ta using BCl/sub 3//Cl/sub 2//Ar inductively coupled plasma",
abstract = "Tantalum (Ta) is one of the candidates for absorber layers of the mask used for the next generation EUVL (extreme ultra-violet lithography) and Xray lithography because of the relative ease of patteming and its durability in cleaning processes I t,h, at involve acidic solution. For the fabrication of a mask structure, the, patteming characteristics of the absorber layers using plasma etching needs to be investigated. For the plasma etch of fine structure with the pattern size as low as 100 nm, inductively coupled plasma (ICP) system are often used.",
author = "Lee, \{Y. S.\} and Na, \{S. W.\} and Song, \{S. G.\} and Kim, \{Y. M.\} and Lee, \{N. E.\} and Ahn, \{J. H.\}",
note = "Publisher Copyright: {\textcopyright} 2003 Japan Soc. of Applied.; International Microprocesses and Nanotechnology Conference, MNC 2003 ; Conference date: 29-10-2003 Through 31-10-2003",
year = "2003",
doi = "10.1109/IMNC.2003.1268744",
language = "English",
series = "Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "258--259",
booktitle = "Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003",
}