Etching characteristics of SrBi2Ta2O9 film with Ar/CHF3 plasma

Jung Woo Seo; Do Haing Lee; Won Jae Lee; Byoung Gon Yu; Kwang Ho Kwon; Geun Young Yeom; Eui Goo Chang; Chang Il Kim

doi:10.1116/1.582353

Etching characteristics of SrBi₂Ta₂O₉ film with Ar/CHF₃ plasma

Jung Woo Seo
, Do Haing Lee
, Won Jae Lee
, Byoung Gon Yu
, Kwang Ho Kwon
, Geun Young Yeom
, Eui Goo Chang
, Chang Il Kim

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

13 Scopus citations

Abstract

Thin SrBi₂Ta₂O₉ films were etched with an inductively-coupled Ar/CHF₃ plasma, and the etch rate and selectivity were determined as a function of the gas mixing ratios. X-ray photoelectron spectroscopy, secondary ion mass spectrometry and scanning electron microscopy were used to characterize the etched surfaces.

Original language	English
Pages (from-to)	1354-1358
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	18
Issue number	4 I
DOIs	https://doi.org/10.1116/1.582353
State	Published - Jul 2000
Event	46th National Symposium of the American Vacuum Society - Seatlle, WA, USA Duration: 25 Oct 1999 → 29 Oct 1999

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@article{27c1f2dd6b704e338e61664c693323c1,

title = "Etching characteristics of SrBi2Ta2O9 film with Ar/CHF3 plasma",

abstract = "Thin SrBi2Ta2O9 films were etched with an inductively-coupled Ar/CHF3 plasma, and the etch rate and selectivity were determined as a function of the gas mixing ratios. X-ray photoelectron spectroscopy, secondary ion mass spectrometry and scanning electron microscopy were used to characterize the etched surfaces.",

author = "Seo, \{Jung Woo\} and Lee, \{Do Haing\} and Lee, \{Won Jae\} and Yu, \{Byoung Gon\} and Kwon, \{Kwang Ho\} and Yeom, \{Geun Young\} and Chang, \{Eui Goo\} and Kim, \{Chang Il\}",

year = "2000",

month = jul,

doi = "10.1116/1.582353",

language = "English",

volume = "18",

pages = "1354--1358",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "4 I",

note = "46th National Symposium of the American Vacuum Society ; Conference date: 25-10-1999 Through 29-10-1999",

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TY - JOUR

T1 - Etching characteristics of SrBi2Ta2O9 film with Ar/CHF3 plasma

AU - Seo, Jung Woo

AU - Lee, Do Haing

AU - Lee, Won Jae

AU - Yu, Byoung Gon

AU - Kwon, Kwang Ho

AU - Yeom, Geun Young

AU - Chang, Eui Goo

AU - Kim, Chang Il

PY - 2000/7

Y1 - 2000/7

N2 - Thin SrBi2Ta2O9 films were etched with an inductively-coupled Ar/CHF3 plasma, and the etch rate and selectivity were determined as a function of the gas mixing ratios. X-ray photoelectron spectroscopy, secondary ion mass spectrometry and scanning electron microscopy were used to characterize the etched surfaces.

AB - Thin SrBi2Ta2O9 films were etched with an inductively-coupled Ar/CHF3 plasma, and the etch rate and selectivity were determined as a function of the gas mixing ratios. X-ray photoelectron spectroscopy, secondary ion mass spectrometry and scanning electron microscopy were used to characterize the etched surfaces.

UR - https://www.scopus.com/pages/publications/0001593349

U2 - 10.1116/1.582353

DO - 10.1116/1.582353

M3 - Conference article

AN - SCOPUS:0001593349

SN - 0734-2101

VL - 18

SP - 1354

EP - 1358

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4 I

T2 - 46th National Symposium of the American Vacuum Society

Y2 - 25 October 1999 through 29 October 1999

ER -

Etching characteristics of SrBi₂Ta₂O₉ film with Ar/CHF₃ plasma

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