Etching characteristics of silicon oxide using amorphous carbon hard mask in dual-frequency capacitively coupled plasma

J. H. Lee; B. S. Kwon; N. E. Lee

doi:10.1016/j.tsf.2012.02.047

Etching characteristics of silicon oxide using amorphous carbon hard mask in dual-frequency capacitively coupled plasma

J. H. Lee
, B. S. Kwon
, N. E. Lee

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

This study examined the effects of different frequency combinations, 27.12/2 MHz and 60/2 MHz, and the gas flow ratio of dual-frequency capacitively coupled CH ₂F ₂/C ₄F ₈/O ₂/Ar plasmas on the etch characteristics of silicon oxide. The etch rate of the SiO ₂ layer decreased and the etch selectivity increased with increasing flow ratio, Q(CH ₂F ₂), of CH ₂F ₂/(CH ₂F ₂ + C ₄F ₈). The etch rates of SiO ₂ and the chemical-vapor deposited amorphous carbon layer decreased with increasing Q(CH ₂F ₂) but the etch selectivity of SiO ₂ over the ACL increased. The etch rate of SiO ₂ at 60/2 MHz was faster than that at 27.12/2 MHz. In addition, the line edge roughness and critical dimension values tended to increase with increasing Q(CH ₂F ₂).

Original language	English
Pages (from-to)	83-88
Number of pages	6
Journal	Thin Solid Films
Volume	521
DOIs	https://doi.org/10.1016/j.tsf.2012.02.047
State	Published - 30 Oct 2012

Keywords

Amorphous carbon layer
Dual frequency superimposed capacitively coupled plasma
Line edge roughness
Plasma etching
Silicon dioxide

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10.1016/j.tsf.2012.02.047

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@article{e8e099098cf142718bf33ab5e72c692c,

title = "Etching characteristics of silicon oxide using amorphous carbon hard mask in dual-frequency capacitively coupled plasma",

abstract = "This study examined the effects of different frequency combinations, 27.12/2 MHz and 60/2 MHz, and the gas flow ratio of dual-frequency capacitively coupled CH 2F 2/C 4F 8/O 2/Ar plasmas on the etch characteristics of silicon oxide. The etch rate of the SiO 2 layer decreased and the etch selectivity increased with increasing flow ratio, Q(CH 2F 2), of CH 2F 2/(CH 2F 2 + C 4F 8). The etch rates of SiO 2 and the chemical-vapor deposited amorphous carbon layer decreased with increasing Q(CH 2F 2) but the etch selectivity of SiO 2 over the ACL increased. The etch rate of SiO 2 at 60/2 MHz was faster than that at 27.12/2 MHz. In addition, the line edge roughness and critical dimension values tended to increase with increasing Q(CH 2F 2).",

keywords = "Amorphous carbon layer, Dual frequency superimposed capacitively coupled plasma, Line edge roughness, Plasma etching, Silicon dioxide",

author = "Lee, \{J. H.\} and Kwon, \{B. S.\} and Lee, \{N. E.\}",

year = "2012",

month = oct,

day = "30",

doi = "10.1016/j.tsf.2012.02.047",

language = "English",

volume = "521",

pages = "83--88",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Etching characteristics of silicon oxide using amorphous carbon hard mask in dual-frequency capacitively coupled plasma

AU - Lee, J. H.

AU - Kwon, B. S.

AU - Lee, N. E.

PY - 2012/10/30

Y1 - 2012/10/30

N2 - This study examined the effects of different frequency combinations, 27.12/2 MHz and 60/2 MHz, and the gas flow ratio of dual-frequency capacitively coupled CH 2F 2/C 4F 8/O 2/Ar plasmas on the etch characteristics of silicon oxide. The etch rate of the SiO 2 layer decreased and the etch selectivity increased with increasing flow ratio, Q(CH 2F 2), of CH 2F 2/(CH 2F 2 + C 4F 8). The etch rates of SiO 2 and the chemical-vapor deposited amorphous carbon layer decreased with increasing Q(CH 2F 2) but the etch selectivity of SiO 2 over the ACL increased. The etch rate of SiO 2 at 60/2 MHz was faster than that at 27.12/2 MHz. In addition, the line edge roughness and critical dimension values tended to increase with increasing Q(CH 2F 2).

AB - This study examined the effects of different frequency combinations, 27.12/2 MHz and 60/2 MHz, and the gas flow ratio of dual-frequency capacitively coupled CH 2F 2/C 4F 8/O 2/Ar plasmas on the etch characteristics of silicon oxide. The etch rate of the SiO 2 layer decreased and the etch selectivity increased with increasing flow ratio, Q(CH 2F 2), of CH 2F 2/(CH 2F 2 + C 4F 8). The etch rates of SiO 2 and the chemical-vapor deposited amorphous carbon layer decreased with increasing Q(CH 2F 2) but the etch selectivity of SiO 2 over the ACL increased. The etch rate of SiO 2 at 60/2 MHz was faster than that at 27.12/2 MHz. In addition, the line edge roughness and critical dimension values tended to increase with increasing Q(CH 2F 2).

KW - Amorphous carbon layer

KW - Dual frequency superimposed capacitively coupled plasma

KW - Line edge roughness

KW - Plasma etching

KW - Silicon dioxide

UR - https://www.scopus.com/pages/publications/84867054488

U2 - 10.1016/j.tsf.2012.02.047

DO - 10.1016/j.tsf.2012.02.047

M3 - Article

AN - SCOPUS:84867054488

SN - 0040-6090

VL - 521

SP - 83

EP - 88

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Etching characteristics of silicon oxide using amorphous carbon hard mask in dual-frequency capacitively coupled plasma

Abstract

Keywords

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