Etching characteristics and mechanisms of Mo thin films in Cl₂/Ar and CF₄/Ar inductively coupled plasmas

Engineering

• Thin Films 100%
• Inductively Coupled Plasma 100%
• Ray Photoelectron Spectroscopy 50%
• Etching Process 50%
• Ar Plasma 50%
• Input Power 50%
• Ion Energy 50%
• Gas Mixture 50%
• Gas Mixing 50%
• Plasma Diagnostics 50%
• Gas Pressure 50%
• Predicted Model 50%

Material Science

• Thin Films 100%
• X-Ray Photoelectron Spectroscopy 50%
• Gas Mixture 50%