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Etch characteristics of GaN using inductively coupled Cl2/Ar and Cl2/BCl3 plasmas

  • Y. H. Lee
  • , H. S. Kim
  • , G. Y. Yeom
  • , J. W. Lee
  • , M. C. Yoo
  • , T. I. Kim
  • Sungkyunkwan University
  • Samsung

Research output: Contribution to journal › Article › peer-review

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