Erratum: Tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition (ACS Applied Materials and Interfaces (2014) 6 (10482-10488) DOI:10.1021/am502048d)

Young Chul Byun; Sungho Choi; Youngseo An; Paul C. McIntyre; Hyoungsub Kim

doi:10.1021/acsami.5b02372

Erratum: Tailoring the interface quality between HfO₂ and GaAs via in situ ZnO passivation using atomic layer deposition (ACS Applied Materials and Interfaces (2014) 6 (10482-10488) DOI:10.1021/am502048d)

Young Chul Byun
, Sungho Choi
, Youngseo An
, Paul C. McIntyre
, Hyoungsub Kim

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Comment/debate

2 Scopus citations

Original language	English
Pages (from-to)	7445
Number of pages	1
Journal	ACS Applied Materials and Interfaces
Volume	7
Issue number	13
DOIs	https://doi.org/10.1021/acsami.5b02372
State	Published - 8 Apr 2015

Access to Document

10.1021/acsami.5b02372

Cite this

@article{a9d49358d90b4b59800ced409b596cf2,

title = "Erratum: Tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition (ACS Applied Materials and Interfaces (2014) 6 (10482-10488) DOI:10.1021/am502048d)",

author = "Byun, \{Young Chul\} and Sungho Choi and Youngseo An and McIntyre, \{Paul C.\} and Hyoungsub Kim",

year = "2015",

month = apr,

day = "8",

doi = "10.1021/acsami.5b02372",

language = "English",

volume = "7",

pages = "7445",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "13",

}

Erratum: Tailoring the interface quality between HfO₂ and GaAs via in situ ZnO passivation using atomic layer deposition (ACS Applied Materials and Interfaces (2014) 6 (10482-10488) DOI:10.1021/am502048d). / Byun, Young Chul; Choi, Sungho; An, Youngseo et al.
In: ACS Applied Materials and Interfaces, Vol. 7, No. 13, 08.04.2015, p. 7445.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Erratum

T2 - Tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition (ACS Applied Materials and Interfaces (2014) 6 (10482-10488) DOI:10.1021/am502048d)

AU - Byun, Young Chul

AU - Choi, Sungho

AU - An, Youngseo

AU - McIntyre, Paul C.

AU - Kim, Hyoungsub

PY - 2015/4/8

Y1 - 2015/4/8

UR - https://www.scopus.com/pages/publications/84926678244

U2 - 10.1021/acsami.5b02372

DO - 10.1021/acsami.5b02372

M3 - Comment/debate

AN - SCOPUS:84926678244

SN - 1944-8244

VL - 7

SP - 7445

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 13

ER -

Erratum: Tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition (ACS Applied Materials and Interfaces (2014) 6 (10482-10488) DOI:10.1021/am502048d)

Access to Document

Other files and links

Cite this

Erratum: Tailoring the interface quality between HfO₂ and GaAs via in situ ZnO passivation using atomic layer deposition (ACS Applied Materials and Interfaces (2014) 6 (10482-10488) DOI:10.1021/am502048d)