Erratum: Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors (Applied Physics Letters (2016) 108 (141604))

Saeroonter Oh; Ju Heyuck Baeck; Jong Uk Bae; Kwon Shik Park; In Byeong Kang

doi:10.1063/1.4947573

Erratum: Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors (Applied Physics Letters (2016) 108 (141604))

Saeroonter Oh
, Ju Heyuck Baeck
, Jong Uk Bae
, Kwon Shik Park
, In Byeong Kang

Hanyang University
LG Corporation

Research output: Contribution to journal › Comment/debate

5 Scopus citations

Original language	English
Article number	169903
Journal	Applied Physics Letters
Volume	108
Issue number	16
DOIs	https://doi.org/10.1063/1.4947573
State	Published - 18 Apr 2016
Externally published	Yes

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10.1063/1.4947573

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title = "Erratum: Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors (Applied Physics Letters (2016) 108 (141604))",

author = "Saeroonter Oh and Baeck, \{Ju Heyuck\} and Bae, \{Jong Uk\} and Park, \{Kwon Shik\} and Kang, \{In Byeong\}",

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doi = "10.1063/1.4947573",

language = "English",

volume = "108",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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Erratum: Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors (Applied Physics Letters (2016) 108 (141604)). / Oh, Saeroonter; Baeck, Ju Heyuck; Bae, Jong Uk et al.
In: Applied Physics Letters, Vol. 108, No. 16, 169903, 18.04.2016.

Research output: Contribution to journal › Comment/debate

TY - JOUR

T1 - Erratum

T2 - Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors (Applied Physics Letters (2016) 108 (141604))

AU - Oh, Saeroonter

AU - Baeck, Ju Heyuck

AU - Bae, Jong Uk

AU - Park, Kwon Shik

AU - Kang, In Byeong

PY - 2016/4/18

Y1 - 2016/4/18

UR - https://www.scopus.com/pages/publications/84966774797

U2 - 10.1063/1.4947573

DO - 10.1063/1.4947573

M3 - Comment/debate

AN - SCOPUS:84966774797

SN - 0003-6951

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

M1 - 169903

ER -

Erratum: Effect of interfacial excess oxygen on positive-bias temperature stress instability of self-aligned coplanar InGaZnO thin-film transistors (Applied Physics Letters (2016) 108 (141604))

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