Erratum: Author Correction: The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer (Scientific reports (2017) 7 1 (10885))

Yeonwoo Shin; Sang Tae Kim; Kuntae Kim; Mi Young Kim; Saeroonter Oh; Jae Kyeong Jeong

doi:10.1038/s41598-018-25896-6

Erratum: Author Correction: The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer (Scientific reports (2017) 7 1 (10885))

Yeonwoo Shin
, Sang Tae Kim
, Kuntae Kim
, Mi Young Kim
, Saeroonter Oh
, Jae Kyeong Jeong

Hanyang University
Seoul National University

Research output: Contribution to journal › Comment/debate

Abstract

A correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has not been fixed in the paper.

Original language	English
Article number	7883
Pages (from-to)	7883
Number of pages	1
Journal	Scientific Reports
Volume	8
Issue number	1
DOIs	https://doi.org/10.1038/s41598-018-25896-6
State	Published - 15 May 2018
Externally published	Yes

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10.1038/s41598-018-25896-6

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title = "Erratum: Author Correction: The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer (Scientific reports (2017) 7 1 (10885))",

abstract = "A correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has not been fixed in the paper.",

author = "Yeonwoo Shin and Kim, \{Sang Tae\} and Kuntae Kim and Kim, \{Mi Young\} and Saeroonter Oh and Jeong, \{Jae Kyeong\}",

year = "2018",

month = may,

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doi = "10.1038/s41598-018-25896-6",

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journal = "Scientific Reports",

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Erratum: Author Correction: The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer (Scientific reports (2017) 7 1 (10885)). / Shin, Yeonwoo; Kim, Sang Tae; Kim, Kuntae et al.
In: Scientific Reports, Vol. 8, No. 1, 7883, 15.05.2018, p. 7883.

Research output: Contribution to journal › Comment/debate

TY - JOUR

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T2 - Author Correction: The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer (Scientific reports (2017) 7 1 (10885))

AU - Shin, Yeonwoo

AU - Kim, Sang Tae

AU - Kim, Kuntae

AU - Kim, Mi Young

AU - Oh, Saeroonter

AU - Jeong, Jae Kyeong

PY - 2018/5/15

Y1 - 2018/5/15

N2 - A correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has not been fixed in the paper.

AB - A correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has not been fixed in the paper.

UR - https://www.scopus.com/pages/publications/85070459574

U2 - 10.1038/s41598-018-25896-6

DO - 10.1038/s41598-018-25896-6

M3 - Comment/debate

C2 - 29760500

AN - SCOPUS:85070459574

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JO - Scientific Reports

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ER -

Erratum: Author Correction: The Mobility Enhancement of Indium Gallium Zinc Oxide Transistors via Low-temperature Crystallization using a Tantalum Catalytic Layer (Scientific reports (2017) 7 1 (10885))

Abstract

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