Skip to main navigation Skip to search Skip to main content

Enhancing radiation-resistance of amorphous indium-zinc-oxide thin-film transistors by group IV transition element doping

  • Sogang University

Research output: Contribution to journal › Article › peer-review

14   Link opens in a new tab Scopus citations

Fingerprint

Dive into the research topics of 'Enhancing radiation-resistance of amorphous indium-zinc-oxide thin-film transistors by group IV transition element doping'. Together they form a unique fingerprint.
Sort by

Material Science