Enhancement of the magnetoresistance by inserting a nano oxide layer in Mn-lr bottom spin valve

S. Y. Yoon; D. H. Lee; J. Y. Lee; Y. S. Kim; D. H. Yoon; S. J. Suh

Enhancement of the magnetoresistance by inserting a nano oxide layer in Mn-lr bottom spin valve

S. Y. Yoon
, D. H. Lee
, J. Y. Lee
, Y. S. Kim
, D. H. Yoon
, S. J. Suh

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Si/Ta/Ni-Fe/Mn-Ir/Co-Fe/NOL/Co-Fe/Cu/Co-Fe/capping bottom specular spin valves were prepared by using the DC magnetron sputtering method. The specular spin valve (with nano oxide layer (NOL)) exhibited higher MR% (Magnetoresistance) ratio and H _ex (exchange biased field) than those of a conventional spin valve (without NOL). Also, the conventional spin valve showed a higher H _in (interlayer coupling field) than the specular spin valve. RBS (Rutherford back scattering) and TEM (Transmission electron microscopy) analyses indicated that thickness of NOL was about 2 nm. The thermal aging experiment showed that the Ta capping layer was more stable than the Al capping layer.

Original language	English
Pages (from-to)	1075-1078
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	44
Issue number	5 I
State	Published - May 2004

Keywords

Exchange bias field
MR%
Nano oxide layer
Specular spin valve

Cite this

@article{2e6d2047d1b843448f2382c78851ed29,

title = "Enhancement of the magnetoresistance by inserting a nano oxide layer in Mn-lr bottom spin valve",

abstract = "Si/Ta/Ni-Fe/Mn-Ir/Co-Fe/NOL/Co-Fe/Cu/Co-Fe/capping bottom specular spin valves were prepared by using the DC magnetron sputtering method. The specular spin valve (with nano oxide layer (NOL)) exhibited higher MR\% (Magnetoresistance) ratio and H ex (exchange biased field) than those of a conventional spin valve (without NOL). Also, the conventional spin valve showed a higher H in (interlayer coupling field) than the specular spin valve. RBS (Rutherford back scattering) and TEM (Transmission electron microscopy) analyses indicated that thickness of NOL was about 2 nm. The thermal aging experiment showed that the Ta capping layer was more stable than the Al capping layer.",

keywords = "Exchange bias field, MR\%, Nano oxide layer, Specular spin valve",

author = "Yoon, \{S. Y.\} and Lee, \{D. H.\} and Lee, \{J. Y.\} and Kim, \{Y. S.\} and Yoon, \{D. H.\} and Suh, \{S. J.\}",

year = "2004",

month = may,

language = "English",

volume = "44",

pages = "1075--1078",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "5 I",

}

TY - JOUR

T1 - Enhancement of the magnetoresistance by inserting a nano oxide layer in Mn-lr bottom spin valve

AU - Yoon, S. Y.

AU - Lee, D. H.

AU - Lee, J. Y.

AU - Kim, Y. S.

AU - Yoon, D. H.

AU - Suh, S. J.

PY - 2004/5

Y1 - 2004/5

N2 - Si/Ta/Ni-Fe/Mn-Ir/Co-Fe/NOL/Co-Fe/Cu/Co-Fe/capping bottom specular spin valves were prepared by using the DC magnetron sputtering method. The specular spin valve (with nano oxide layer (NOL)) exhibited higher MR% (Magnetoresistance) ratio and H ex (exchange biased field) than those of a conventional spin valve (without NOL). Also, the conventional spin valve showed a higher H in (interlayer coupling field) than the specular spin valve. RBS (Rutherford back scattering) and TEM (Transmission electron microscopy) analyses indicated that thickness of NOL was about 2 nm. The thermal aging experiment showed that the Ta capping layer was more stable than the Al capping layer.

AB - Si/Ta/Ni-Fe/Mn-Ir/Co-Fe/NOL/Co-Fe/Cu/Co-Fe/capping bottom specular spin valves were prepared by using the DC magnetron sputtering method. The specular spin valve (with nano oxide layer (NOL)) exhibited higher MR% (Magnetoresistance) ratio and H ex (exchange biased field) than those of a conventional spin valve (without NOL). Also, the conventional spin valve showed a higher H in (interlayer coupling field) than the specular spin valve. RBS (Rutherford back scattering) and TEM (Transmission electron microscopy) analyses indicated that thickness of NOL was about 2 nm. The thermal aging experiment showed that the Ta capping layer was more stable than the Al capping layer.

KW - Exchange bias field

KW - MR%

KW - Nano oxide layer

KW - Specular spin valve

UR - https://www.scopus.com/pages/publications/2942633217

M3 - Article

AN - SCOPUS:2942633217

SN - 0374-4884

VL - 44

SP - 1075

EP - 1078

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 5 I

ER -

Enhancement of the magnetoresistance by inserting a nano oxide layer in Mn-lr bottom spin valve

Abstract

Keywords

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