Enhancement of the electrical performance of electrodeposited n-type ZnO nanorods by antimony doping

We investigated the influence of antimony (Sb) dopants (6 ∼ 11 at%) with multivalent metal ions (Sb³⁺/Sb⁵⁺) on the electrical properties of ZnO nanorods for application in photoelectronic devices. More vertically aligned and more conductive n-type ZnO nanorods were effectively prepared via the electrochemical deposition process. The addition of a small amount of Sb in the ZnO nanorods induced a faster growth rate and high aspect ratio. The remarkable enhancement of electrical conductivity resulting from Sb doping was confirmed by photoelectrochemical performance and current-voltage measurements in all oxide n-type ZnO/p-type Cu₂O heterojunctions, which was ascribed to the substitution of Sb for Zn sites without defect complexes. These results demonstrate the feasibility of using Sb as an n-type dopant in ZnO nanorods in a wet-based electrodeposition process.