Enhanced Thermoelectric Performance of p-Type Bi-Sb-Te Alloys by Codoping with Ga and Ag

Kyu Hyoung Lee; Soon Mok Choi; Jong Wook Roh; Sungwoo Hwang; Sang Il Kim; Weon Ho Shin; Hee Jung Park; Jeong Hoon Lee; Sung Wng Kim; Dae Jin Yang

doi:10.1007/s11664-014-3446-1

Enhanced Thermoelectric Performance of p-Type Bi-Sb-Te Alloys by Codoping with Ga and Ag

Kyu Hyoung Lee
, Soon Mok Choi
, Jong Wook Roh
, Sungwoo Hwang
, Sang Il Kim
, Weon Ho Shin
, Hee Jung Park
, Jeong Hoon Lee
, Sung Wng Kim
, Dae Jin Yang

Department of Energy

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

We report an enhancement of the thermoelectric performance in spark-plasma-sintered polycrystalline p-type Bi_0.42Sb_1.58Te₃ by codoping with Ga and Ag at Bi/Sb-site. Through controlled doping of Ga (n-type) and Ag (p-type), electronic transport properties including the electrical conductivity (~988 S/cm at 300 K) and power factor (~3.91 mW m⁻¹ K⁻² at 300 K) could be maintained at values comparable to those of pristine Bi_0.42Sb_1.58Te₃, while the lattice thermal conductivity was significantly reduced due to point-defect phonon scattering originating from the mass difference between the host atoms (Bi and Sb) and dopants (Ga and Ag). Through these synergetic effects, a peak ZT of 1.15 was obtained in Bi_0.42Sb_1.5535Ga_0.025Ag_0.0015Te₃ at 360 K, and ZT could be engineered to be over 1.0 for a wide temperature range (300 K to 420 K).

Original language	English
Pages (from-to)	1531-1535
Number of pages	5
Journal	Journal of Electronic Materials
Volume	44
Issue number	6
DOIs	https://doi.org/10.1007/s11664-014-3446-1
State	Published - 1 Jun 2015

Keywords

codoping
lattice thermal conductivity
phonon scattering
point defects
Thermoelectric

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10.1007/s11664-014-3446-1

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title = "Enhanced Thermoelectric Performance of p-Type Bi-Sb-Te Alloys by Codoping with Ga and Ag",

abstract = "We report an enhancement of the thermoelectric performance in spark-plasma-sintered polycrystalline p-type Bi0.42Sb1.58Te3 by codoping with Ga and Ag at Bi/Sb-site. Through controlled doping of Ga (n-type) and Ag (p-type), electronic transport properties including the electrical conductivity (\textasciitilde{}988 S/cm at 300 K) and power factor (\textasciitilde{}3.91 mW m−1 K−2 at 300 K) could be maintained at values comparable to those of pristine Bi0.42Sb1.58Te3, while the lattice thermal conductivity was significantly reduced due to point-defect phonon scattering originating from the mass difference between the host atoms (Bi and Sb) and dopants (Ga and Ag). Through these synergetic effects, a peak ZT of 1.15 was obtained in Bi0.42Sb1.5535Ga0.025Ag0.0015Te3 at 360 K, and ZT could be engineered to be over 1.0 for a wide temperature range (300 K to 420 K).",

keywords = "codoping, lattice thermal conductivity, phonon scattering, point defects, Thermoelectric",

author = "Lee, \{Kyu Hyoung\} and Choi, \{Soon Mok\} and Roh, \{Jong Wook\} and Sungwoo Hwang and Kim, \{Sang Il\} and Shin, \{Weon Ho\} and Park, \{Hee Jung\} and Lee, \{Jeong Hoon\} and Kim, \{Sung Wng\} and Yang, \{Dae Jin\}",

note = "Publisher Copyright: {\textcopyright} 2014, The Minerals, Metals \& Materials Society.",

year = "2015",

month = jun,

day = "1",

doi = "10.1007/s11664-014-3446-1",

language = "English",

volume = "44",

pages = "1531--1535",

journal = "Journal of Electronic Materials",

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TY - JOUR

T1 - Enhanced Thermoelectric Performance of p-Type Bi-Sb-Te Alloys by Codoping with Ga and Ag

AU - Lee, Kyu Hyoung

AU - Choi, Soon Mok

AU - Roh, Jong Wook

AU - Hwang, Sungwoo

AU - Kim, Sang Il

AU - Shin, Weon Ho

AU - Park, Hee Jung

AU - Lee, Jeong Hoon

AU - Kim, Sung Wng

AU - Yang, Dae Jin

PY - 2015/6/1

Y1 - 2015/6/1

N2 - We report an enhancement of the thermoelectric performance in spark-plasma-sintered polycrystalline p-type Bi0.42Sb1.58Te3 by codoping with Ga and Ag at Bi/Sb-site. Through controlled doping of Ga (n-type) and Ag (p-type), electronic transport properties including the electrical conductivity (~988 S/cm at 300 K) and power factor (~3.91 mW m−1 K−2 at 300 K) could be maintained at values comparable to those of pristine Bi0.42Sb1.58Te3, while the lattice thermal conductivity was significantly reduced due to point-defect phonon scattering originating from the mass difference between the host atoms (Bi and Sb) and dopants (Ga and Ag). Through these synergetic effects, a peak ZT of 1.15 was obtained in Bi0.42Sb1.5535Ga0.025Ag0.0015Te3 at 360 K, and ZT could be engineered to be over 1.0 for a wide temperature range (300 K to 420 K).

AB - We report an enhancement of the thermoelectric performance in spark-plasma-sintered polycrystalline p-type Bi0.42Sb1.58Te3 by codoping with Ga and Ag at Bi/Sb-site. Through controlled doping of Ga (n-type) and Ag (p-type), electronic transport properties including the electrical conductivity (~988 S/cm at 300 K) and power factor (~3.91 mW m−1 K−2 at 300 K) could be maintained at values comparable to those of pristine Bi0.42Sb1.58Te3, while the lattice thermal conductivity was significantly reduced due to point-defect phonon scattering originating from the mass difference between the host atoms (Bi and Sb) and dopants (Ga and Ag). Through these synergetic effects, a peak ZT of 1.15 was obtained in Bi0.42Sb1.5535Ga0.025Ag0.0015Te3 at 360 K, and ZT could be engineered to be over 1.0 for a wide temperature range (300 K to 420 K).

KW - codoping

KW - lattice thermal conductivity

KW - phonon scattering

KW - point defects

KW - Thermoelectric

UR - https://www.scopus.com/pages/publications/84939943468

U2 - 10.1007/s11664-014-3446-1

DO - 10.1007/s11664-014-3446-1

M3 - Article

AN - SCOPUS:84939943468

SN - 0361-5235

VL - 44

SP - 1531

EP - 1535

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 6

ER -

Enhanced Thermoelectric Performance of p-Type Bi-Sb-Te Alloys by Codoping with Ga and Ag

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Keywords

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