Enhanced stability of organic photovoltaics by additional zno layers on rippled zno electron-collecting layer using atomic layer deposition

Kwang Dae Kim; Dong Chan Lim; Myung Geun Jeong; Hyun Ook Seo; Joo Yul Lee; Youngsup Song; Shinuk Cho; Jae Hong Lim; Young Dok Kim

doi:10.5012/bkcs.2014.35.2.353

Enhanced stability of organic photovoltaics by additional zno layers on rippled zno electron-collecting layer using atomic layer deposition

Kwang Dae Kim, Dong Chan Lim, Myung Geun Jeong, Hyun Ook Seo, Joo Yul Lee, Youngsup Song, Shinuk Cho, Jae Hong Lim, Young Dok Kim

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We fabricated organic photovoltaic (OPV) based on ZnO ripple structure on indium tin oxide as electroncollecting layers and PTB7-F20 as donor polymer. In addition, atomic layer deposition (ALD) was used for preparing additional ZnO layers on rippled ZnO. Addition of 2 nm-thick ALD-ZnO resulted in enhanced initial OPV performance and stability. Based on photoluminescence results, we suggest that ALD-ZnO layers reduced number of surface defect sites on ZnO, which can act as electron-hole recombination center of OPV, and increased resistance of ZnO towards surface defect formation.

Original language	English
Pages (from-to)	353-356
Number of pages	4
Journal	Bulletin of the Korean Chemical Society
Volume	35
Issue number	2
DOIs	https://doi.org/10.5012/bkcs.2014.35.2.353
State	Published - 20 Feb 2014

Keywords

Atomic layer deposition
Organic photovoltaic
Stability
Surface defect
Zno

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.5012/bkcs.2014.35.2.353

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title = "Enhanced stability of organic photovoltaics by additional zno layers on rippled zno electron-collecting layer using atomic layer deposition",

abstract = "We fabricated organic photovoltaic (OPV) based on ZnO ripple structure on indium tin oxide as electroncollecting layers and PTB7-F20 as donor polymer. In addition, atomic layer deposition (ALD) was used for preparing additional ZnO layers on rippled ZnO. Addition of 2 nm-thick ALD-ZnO resulted in enhanced initial OPV performance and stability. Based on photoluminescence results, we suggest that ALD-ZnO layers reduced number of surface defect sites on ZnO, which can act as electron-hole recombination center of OPV, and increased resistance of ZnO towards surface defect formation.",

keywords = "Atomic layer deposition, Organic photovoltaic, Stability, Surface defect, Zno",

author = "Kim, \{Kwang Dae\} and Lim, \{Dong Chan\} and Jeong, \{Myung Geun\} and Seo, \{Hyun Ook\} and Lee, \{Joo Yul\} and Youngsup Song and Shinuk Cho and Lim, \{Jae Hong\} and Kim, \{Young Dok\}",

year = "2014",

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day = "20",

doi = "10.5012/bkcs.2014.35.2.353",

language = "English",

volume = "35",

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journal = "Bulletin of the Korean Chemical Society",

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T1 - Enhanced stability of organic photovoltaics by additional zno layers on rippled zno electron-collecting layer using atomic layer deposition

AU - Kim, Kwang Dae

AU - Lim, Dong Chan

AU - Jeong, Myung Geun

AU - Seo, Hyun Ook

AU - Lee, Joo Yul

AU - Song, Youngsup

AU - Cho, Shinuk

AU - Lim, Jae Hong

AU - Kim, Young Dok

PY - 2014/2/20

Y1 - 2014/2/20

N2 - We fabricated organic photovoltaic (OPV) based on ZnO ripple structure on indium tin oxide as electroncollecting layers and PTB7-F20 as donor polymer. In addition, atomic layer deposition (ALD) was used for preparing additional ZnO layers on rippled ZnO. Addition of 2 nm-thick ALD-ZnO resulted in enhanced initial OPV performance and stability. Based on photoluminescence results, we suggest that ALD-ZnO layers reduced number of surface defect sites on ZnO, which can act as electron-hole recombination center of OPV, and increased resistance of ZnO towards surface defect formation.

AB - We fabricated organic photovoltaic (OPV) based on ZnO ripple structure on indium tin oxide as electroncollecting layers and PTB7-F20 as donor polymer. In addition, atomic layer deposition (ALD) was used for preparing additional ZnO layers on rippled ZnO. Addition of 2 nm-thick ALD-ZnO resulted in enhanced initial OPV performance and stability. Based on photoluminescence results, we suggest that ALD-ZnO layers reduced number of surface defect sites on ZnO, which can act as electron-hole recombination center of OPV, and increased resistance of ZnO towards surface defect formation.

KW - Atomic layer deposition

KW - Organic photovoltaic

KW - Stability

KW - Surface defect

KW - Zno

UR - https://www.scopus.com/pages/publications/84894534402

U2 - 10.5012/bkcs.2014.35.2.353

DO - 10.5012/bkcs.2014.35.2.353

M3 - Article

AN - SCOPUS:84894534402

SN - 0253-2964

VL - 35

SP - 353

EP - 356

JO - Bulletin of the Korean Chemical Society

JF - Bulletin of the Korean Chemical Society

IS - 2

ER -

Enhanced stability of organic photovoltaics by additional zno layers on rippled zno electron-collecting layer using atomic layer deposition

Abstract

Keywords

UN SDGs

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