Enhanced stability of organic photovoltaics by additional zno layers on rippled zno electron-collecting layer using atomic layer deposition

Kwang Dae Kim; Dong Chan Lim; Myung Geun Jeong; Hyun Ook Seo; Joo Yul Lee; Youngsup Song; Shinuk Cho; Jae Hong Lim; Young Dok Kim

doi:10.5012/bkcs.2014.35.2.353

Enhanced stability of organic photovoltaics by additional zno layers on rippled zno electron-collecting layer using atomic layer deposition

Kwang Dae Kim
, Dong Chan Lim
, Myung Geun Jeong
, Hyun Ook Seo
, Joo Yul Lee
, Youngsup Song
, Shinuk Cho
, Jae Hong Lim
, Young Dok Kim

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We fabricated organic photovoltaic (OPV) based on ZnO ripple structure on indium tin oxide as electroncollecting layers and PTB7-F20 as donor polymer. In addition, atomic layer deposition (ALD) was used for preparing additional ZnO layers on rippled ZnO. Addition of 2 nm-thick ALD-ZnO resulted in enhanced initial OPV performance and stability. Based on photoluminescence results, we suggest that ALD-ZnO layers reduced number of surface defect sites on ZnO, which can act as electron-hole recombination center of OPV, and increased resistance of ZnO towards surface defect formation.

Original language	English
Pages (from-to)	353-356
Number of pages	4
Journal	Bulletin of the Korean Chemical Society
Volume	35
Issue number	2
DOIs	https://doi.org/10.5012/bkcs.2014.35.2.353
State	Published - 20 Feb 2014

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This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Atomic layer deposition
Organic photovoltaic
Stability
Surface defect
Zno

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10.5012/bkcs.2014.35.2.353

Cite this

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title = "Enhanced stability of organic photovoltaics by additional zno layers on rippled zno electron-collecting layer using atomic layer deposition",

abstract = "We fabricated organic photovoltaic (OPV) based on ZnO ripple structure on indium tin oxide as electroncollecting layers and PTB7-F20 as donor polymer. In addition, atomic layer deposition (ALD) was used for preparing additional ZnO layers on rippled ZnO. Addition of 2 nm-thick ALD-ZnO resulted in enhanced initial OPV performance and stability. Based on photoluminescence results, we suggest that ALD-ZnO layers reduced number of surface defect sites on ZnO, which can act as electron-hole recombination center of OPV, and increased resistance of ZnO towards surface defect formation.",

keywords = "Atomic layer deposition, Organic photovoltaic, Stability, Surface defect, Zno",

author = "Kim, \{Kwang Dae\} and Lim, \{Dong Chan\} and Jeong, \{Myung Geun\} and Seo, \{Hyun Ook\} and Lee, \{Joo Yul\} and Youngsup Song and Shinuk Cho and Lim, \{Jae Hong\} and Kim, \{Young Dok\}",

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day = "20",

doi = "10.5012/bkcs.2014.35.2.353",

language = "English",

volume = "35",

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journal = "Bulletin of the Korean Chemical Society",

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TY - JOUR

T1 - Enhanced stability of organic photovoltaics by additional zno layers on rippled zno electron-collecting layer using atomic layer deposition

AU - Kim, Kwang Dae

AU - Lim, Dong Chan

AU - Jeong, Myung Geun

AU - Seo, Hyun Ook

AU - Lee, Joo Yul

AU - Song, Youngsup

AU - Cho, Shinuk

AU - Lim, Jae Hong

AU - Kim, Young Dok

PY - 2014/2/20

Y1 - 2014/2/20

N2 - We fabricated organic photovoltaic (OPV) based on ZnO ripple structure on indium tin oxide as electroncollecting layers and PTB7-F20 as donor polymer. In addition, atomic layer deposition (ALD) was used for preparing additional ZnO layers on rippled ZnO. Addition of 2 nm-thick ALD-ZnO resulted in enhanced initial OPV performance and stability. Based on photoluminescence results, we suggest that ALD-ZnO layers reduced number of surface defect sites on ZnO, which can act as electron-hole recombination center of OPV, and increased resistance of ZnO towards surface defect formation.

AB - We fabricated organic photovoltaic (OPV) based on ZnO ripple structure on indium tin oxide as electroncollecting layers and PTB7-F20 as donor polymer. In addition, atomic layer deposition (ALD) was used for preparing additional ZnO layers on rippled ZnO. Addition of 2 nm-thick ALD-ZnO resulted in enhanced initial OPV performance and stability. Based on photoluminescence results, we suggest that ALD-ZnO layers reduced number of surface defect sites on ZnO, which can act as electron-hole recombination center of OPV, and increased resistance of ZnO towards surface defect formation.

KW - Atomic layer deposition

KW - Organic photovoltaic

KW - Stability

KW - Surface defect

KW - Zno

UR - https://www.scopus.com/pages/publications/84894534402

U2 - 10.5012/bkcs.2014.35.2.353

DO - 10.5012/bkcs.2014.35.2.353

M3 - Article

AN - SCOPUS:84894534402

SN - 0253-2964

VL - 35

SP - 353

EP - 356

JO - Bulletin of the Korean Chemical Society

JF - Bulletin of the Korean Chemical Society

IS - 2

ER -

Enhanced stability of organic photovoltaics by additional zno layers on rippled zno electron-collecting layer using atomic layer deposition

Abstract

UN SDGs

Keywords

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