Enhanced hardness in two-layer a-BON/nc-SiC coating prepared by plasma-assisted MOCVD and thermal MOCVD

D. C. Lim; B. C. Kang; J. S. Moon; O. M. Moon; J. H. Park; H. G. Jee; S. B. Lee; Y. H. Kim; J. Y. Lee; J. H. Boo

doi:10.1016/j.surfcoat.2004.08.132

Enhanced hardness in two-layer a-BON/nc-SiC coating prepared by plasma-assisted MOCVD and thermal MOCVD

D. C. Lim, B. C. Kang, J. S. Moon, O. M. Moon, J. H. Park, H. G. Jee, S. B. Lee, Y. H. Kim, J. Y. Lee, J. H. Boo

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We have synthesized the simple a-BON and nc-SiC thin films as well as multilayered a-BON/nc-SiC thin film on Si(001) substrates by combining low-frequency RF-derived plasma-assisted MOCVD and thermal MOCVD in the deposition temperature range of 300-900 °C trimethylborate (TMB), and diethylmethylsilane (DEMS) precursors were used to grow a-BON and nc-SiC thin films, respectively. Ar gas was applied as a plasma source and N₂ gas was used as a reactive gas as well as additional nitrogen source. To analyze the mechanism of obtaining new materials with high hardness by combining soft amorphous material with hard crystalline material, in this study, we have mainly investigated the relationship between structure and hardness enhancement of the coating layers on the effects of different kind of layer and the crystallization of layers. The results show that microstructure of each layer and a new nanocrystalline material that deposited between a-BON thin film and nc-SiC thin film affect the hardness enhancement in multilayered a-BON/nc-SiC thin films. Hardness obtained from a-BON was about 10 GPa. However, we could obtain strong hardness enhancement in a multilayered a-BON/nc-SiC thin film up to 36 GPa.

Original language	English
Pages (from-to)	162-166
Number of pages	5
Journal	Surface and Coatings Technology
Volume	193
Issue number	1-3 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.surfcoat.2004.08.132
State	Published - 1 Apr 2005

Keywords

Low-frequency RF PAMOCVD
Multilayered a-BON/nc-SiC thin films
Superhardness
Thermal MOCVD

Access to Document

10.1016/j.surfcoat.2004.08.132

Cite this

@article{699fd78df19e485ebb3afc18562d0745,

title = "Enhanced hardness in two-layer a-BON/nc-SiC coating prepared by plasma-assisted MOCVD and thermal MOCVD",

abstract = "We have synthesized the simple a-BON and nc-SiC thin films as well as multilayered a-BON/nc-SiC thin film on Si(001) substrates by combining low-frequency RF-derived plasma-assisted MOCVD and thermal MOCVD in the deposition temperature range of 300-900 °C trimethylborate (TMB), and diethylmethylsilane (DEMS) precursors were used to grow a-BON and nc-SiC thin films, respectively. Ar gas was applied as a plasma source and N2 gas was used as a reactive gas as well as additional nitrogen source. To analyze the mechanism of obtaining new materials with high hardness by combining soft amorphous material with hard crystalline material, in this study, we have mainly investigated the relationship between structure and hardness enhancement of the coating layers on the effects of different kind of layer and the crystallization of layers. The results show that microstructure of each layer and a new nanocrystalline material that deposited between a-BON thin film and nc-SiC thin film affect the hardness enhancement in multilayered a-BON/nc-SiC thin films. Hardness obtained from a-BON was about 10 GPa. However, we could obtain strong hardness enhancement in a multilayered a-BON/nc-SiC thin film up to 36 GPa.",

keywords = "Low-frequency RF PAMOCVD, Multilayered a-BON/nc-SiC thin films, Superhardness, Thermal MOCVD",

author = "Lim, \{D. C.\} and Kang, \{B. C.\} and Moon, \{J. S.\} and Moon, \{O. M.\} and Park, \{J. H.\} and Jee, \{H. G.\} and Lee, \{S. B.\} and Kim, \{Y. H.\} and Lee, \{J. Y.\} and Boo, \{J. H.\}",

year = "2005",

month = apr,

day = "1",

doi = "10.1016/j.surfcoat.2004.08.132",

language = "English",

volume = "193",

pages = "162--166",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier B.V.",

number = "1-3 SPEC. ISS.",

}

TY - JOUR

T1 - Enhanced hardness in two-layer a-BON/nc-SiC coating prepared by plasma-assisted MOCVD and thermal MOCVD

AU - Lim, D. C.

AU - Kang, B. C.

AU - Moon, J. S.

AU - Moon, O. M.

AU - Park, J. H.

AU - Jee, H. G.

AU - Lee, S. B.

AU - Kim, Y. H.

AU - Lee, J. Y.

AU - Boo, J. H.

PY - 2005/4/1

Y1 - 2005/4/1

N2 - We have synthesized the simple a-BON and nc-SiC thin films as well as multilayered a-BON/nc-SiC thin film on Si(001) substrates by combining low-frequency RF-derived plasma-assisted MOCVD and thermal MOCVD in the deposition temperature range of 300-900 °C trimethylborate (TMB), and diethylmethylsilane (DEMS) precursors were used to grow a-BON and nc-SiC thin films, respectively. Ar gas was applied as a plasma source and N2 gas was used as a reactive gas as well as additional nitrogen source. To analyze the mechanism of obtaining new materials with high hardness by combining soft amorphous material with hard crystalline material, in this study, we have mainly investigated the relationship between structure and hardness enhancement of the coating layers on the effects of different kind of layer and the crystallization of layers. The results show that microstructure of each layer and a new nanocrystalline material that deposited between a-BON thin film and nc-SiC thin film affect the hardness enhancement in multilayered a-BON/nc-SiC thin films. Hardness obtained from a-BON was about 10 GPa. However, we could obtain strong hardness enhancement in a multilayered a-BON/nc-SiC thin film up to 36 GPa.

AB - We have synthesized the simple a-BON and nc-SiC thin films as well as multilayered a-BON/nc-SiC thin film on Si(001) substrates by combining low-frequency RF-derived plasma-assisted MOCVD and thermal MOCVD in the deposition temperature range of 300-900 °C trimethylborate (TMB), and diethylmethylsilane (DEMS) precursors were used to grow a-BON and nc-SiC thin films, respectively. Ar gas was applied as a plasma source and N2 gas was used as a reactive gas as well as additional nitrogen source. To analyze the mechanism of obtaining new materials with high hardness by combining soft amorphous material with hard crystalline material, in this study, we have mainly investigated the relationship between structure and hardness enhancement of the coating layers on the effects of different kind of layer and the crystallization of layers. The results show that microstructure of each layer and a new nanocrystalline material that deposited between a-BON thin film and nc-SiC thin film affect the hardness enhancement in multilayered a-BON/nc-SiC thin films. Hardness obtained from a-BON was about 10 GPa. However, we could obtain strong hardness enhancement in a multilayered a-BON/nc-SiC thin film up to 36 GPa.

KW - Low-frequency RF PAMOCVD

KW - Multilayered a-BON/nc-SiC thin films

KW - Superhardness

KW - Thermal MOCVD

UR - https://www.scopus.com/pages/publications/13844253799

U2 - 10.1016/j.surfcoat.2004.08.132

DO - 10.1016/j.surfcoat.2004.08.132

M3 - Article

AN - SCOPUS:13844253799

SN - 0257-8972

VL - 193

SP - 162

EP - 166

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - 1-3 SPEC. ISS.

ER -

Enhanced hardness in two-layer a-BON/nc-SiC coating prepared by plasma-assisted MOCVD and thermal MOCVD

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this