Enhanced Bifacial III-V/Silicon Multijunction Solar-Cell-Based Promising Structure of c-Si Bottom Cells

None Alamgeer; Polgampola Chamani Madara; Muhammad Quddamah Khokhar; Hasnain Yousuf; Jaljalalul Abedin Jony; Rafi Ur Rahman; Junhan Bae; Seokjin Jang; Min Kyung Shin; Sangheon Park; Junsin Yi

doi:10.1021/acsaem.4c02511

Enhanced Bifacial III-V/Silicon Multijunction Solar-Cell-Based Promising Structure of c-Si Bottom Cells

None Alamgeer
, Polgampola Chamani Madara
, Muhammad Quddamah Khokhar
, Hasnain Yousuf
, Jaljalalul Abedin Jony
, Rafi Ur Rahman
, Junhan Bae
, Seokjin Jang
, Min Kyung Shin
, Sangheon Park
, Junsin Yi

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We present a structural design for a four-terminal III-V/crystalline silicon (c-Si) multijunction (MJ) device based on optimized bifacial illumination. The proposed configuration consists of a triple-junction top cell incorporating gallium indium phosphide (GaInP), indium gallium arsenide (InGaAs), and germanium (Ge), paired with a tunnel oxide passivating contact (TOPCon) as the bottom cell. The bifacial TOPCon cell effectively enhances the transmission of albedo-reflected light into the c-Si absorber, delivering superior performance compared to conventional heterojunction cells. With an additional rear illumination of 0.3 sun, the bottom cell efficiency increases by 9.61%. Bifacial illumination enhances the overall efficiency of the MJ device by 20.77% compared to the monofacial device. With the power conversion efficiency (PCE) of bifacial GaInP/InGaAs/Ge/TOPCon MJ devices reaching 35.70%, this design demonstrates significant potential for advancing high-efficiency bifacial solar cell technologies.

Original language	English
Pages (from-to)	991-997
Number of pages	7
Journal	ACS Applied Energy Materials
Volume	8
Issue number	2
DOIs	https://doi.org/10.1021/acsaem.4c02511
State	Published - 27 Jan 2025

Keywords

albedo effect
GaInP/InGaP/Ge
III−V Cell
multijunction devices
TOPCon Cell

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1021/acsaem.4c02511

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title = "Enhanced Bifacial III-V/Silicon Multijunction Solar-Cell-Based Promising Structure of c-Si Bottom Cells",

abstract = "We present a structural design for a four-terminal III-V/crystalline silicon (c-Si) multijunction (MJ) device based on optimized bifacial illumination. The proposed configuration consists of a triple-junction top cell incorporating gallium indium phosphide (GaInP), indium gallium arsenide (InGaAs), and germanium (Ge), paired with a tunnel oxide passivating contact (TOPCon) as the bottom cell. The bifacial TOPCon cell effectively enhances the transmission of albedo-reflected light into the c-Si absorber, delivering superior performance compared to conventional heterojunction cells. With an additional rear illumination of 0.3 sun, the bottom cell efficiency increases by 9.61\%. Bifacial illumination enhances the overall efficiency of the MJ device by 20.77\% compared to the monofacial device. With the power conversion efficiency (PCE) of bifacial GaInP/InGaAs/Ge/TOPCon MJ devices reaching 35.70\%, this design demonstrates significant potential for advancing high-efficiency bifacial solar cell technologies.",

keywords = "albedo effect, GaInP/InGaP/Ge, III−V Cell, multijunction devices, TOPCon Cell",

author = "None Alamgeer and Madara, \{Polgampola Chamani\} and Khokhar, \{Muhammad Quddamah\} and Hasnain Yousuf and Jony, \{Jaljalalul Abedin\} and Rahman, \{Rafi Ur\} and Junhan Bae and Seokjin Jang and Shin, \{Min Kyung\} and Sangheon Park and Junsin Yi",

note = "Publisher Copyright: {\textcopyright} 2025 American Chemical Society.",

year = "2025",

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doi = "10.1021/acsaem.4c02511",

language = "English",

volume = "8",

pages = "991--997",

journal = "ACS Applied Energy Materials",

issn = "2574-0962",

publisher = "American Chemical Society",

number = "2",

}

TY - JOUR

T1 - Enhanced Bifacial III-V/Silicon Multijunction Solar-Cell-Based Promising Structure of c-Si Bottom Cells

AU - Alamgeer, None

AU - Madara, Polgampola Chamani

AU - Khokhar, Muhammad Quddamah

AU - Yousuf, Hasnain

AU - Jony, Jaljalalul Abedin

AU - Rahman, Rafi Ur

AU - Bae, Junhan

AU - Jang, Seokjin

AU - Shin, Min Kyung

AU - Park, Sangheon

AU - Yi, Junsin

PY - 2025/1/27

Y1 - 2025/1/27

N2 - We present a structural design for a four-terminal III-V/crystalline silicon (c-Si) multijunction (MJ) device based on optimized bifacial illumination. The proposed configuration consists of a triple-junction top cell incorporating gallium indium phosphide (GaInP), indium gallium arsenide (InGaAs), and germanium (Ge), paired with a tunnel oxide passivating contact (TOPCon) as the bottom cell. The bifacial TOPCon cell effectively enhances the transmission of albedo-reflected light into the c-Si absorber, delivering superior performance compared to conventional heterojunction cells. With an additional rear illumination of 0.3 sun, the bottom cell efficiency increases by 9.61%. Bifacial illumination enhances the overall efficiency of the MJ device by 20.77% compared to the monofacial device. With the power conversion efficiency (PCE) of bifacial GaInP/InGaAs/Ge/TOPCon MJ devices reaching 35.70%, this design demonstrates significant potential for advancing high-efficiency bifacial solar cell technologies.

AB - We present a structural design for a four-terminal III-V/crystalline silicon (c-Si) multijunction (MJ) device based on optimized bifacial illumination. The proposed configuration consists of a triple-junction top cell incorporating gallium indium phosphide (GaInP), indium gallium arsenide (InGaAs), and germanium (Ge), paired with a tunnel oxide passivating contact (TOPCon) as the bottom cell. The bifacial TOPCon cell effectively enhances the transmission of albedo-reflected light into the c-Si absorber, delivering superior performance compared to conventional heterojunction cells. With an additional rear illumination of 0.3 sun, the bottom cell efficiency increases by 9.61%. Bifacial illumination enhances the overall efficiency of the MJ device by 20.77% compared to the monofacial device. With the power conversion efficiency (PCE) of bifacial GaInP/InGaAs/Ge/TOPCon MJ devices reaching 35.70%, this design demonstrates significant potential for advancing high-efficiency bifacial solar cell technologies.

KW - albedo effect

KW - GaInP/InGaP/Ge

KW - III−V Cell

KW - multijunction devices

KW - TOPCon Cell

UR - https://www.scopus.com/pages/publications/85214898594

U2 - 10.1021/acsaem.4c02511

DO - 10.1021/acsaem.4c02511

M3 - Article

AN - SCOPUS:85214898594

SN - 2574-0962

VL - 8

SP - 991

EP - 997

JO - ACS Applied Energy Materials

JF - ACS Applied Energy Materials

IS - 2

ER -

Enhanced Bifacial III-V/Silicon Multijunction Solar-Cell-Based Promising Structure of c-Si Bottom Cells

Abstract

Keywords

UN SDGs

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