Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In                         2                         O                         3                          and NPB/Sn-doped In                         2                         O                         3

Kwanwook Jung; Soohyung Park; Younjoo Lee; Yungsik Youn; Hae In Shin; Han Ki Kim; Hyunbok Lee; Yeonjin Yi

doi:10.1016/j.apsusc.2016.06.157

Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In ₂ O ₃ and NPB/Sn-doped In ₂ O ₃

Kwanwook Jung, Soohyung Park, Younjoo Lee, Yungsik Youn, Hae In Shin, Han Ki Kim, Hyunbok Lee, Yeonjin Yi

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The electronic structures of Ag-doped In ₂ O ₃ (IAgO) and its energy level alignments with a N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) hole transport layer (HTL) were investigated using in situ ultraviolet and X-ray photoelectron spectroscopies (UPS and XPS). As compared to the conventional Sn-doped In ₂ O ₃ (ITO), IAgO has less oxygen vacancies leading to a higher work function (WF). The lower hole injection barrier (Φ _h ) from IAgO to a NPB HTL is observed, which is attributed mainly to its higher WF and interface dipoles. The UPS measurements reveal that the Φ _h is 0.87 eV at NPB/IAgO while 1.11 eV is at NPB/ITO. Therefore, IAgO could be an alternative transparent anode in organic optoelectronics.

Original language	English
Pages (from-to)	625-630
Number of pages	6
Journal	Applied Surface Science
Volume	387
DOIs	https://doi.org/10.1016/j.apsusc.2016.06.157
State	Published - 30 Nov 2016
Externally published	Yes

Keywords

Hole injection barrier
IAgO
ITO
NPB
UPS
XPS

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10.1016/j.apsusc.2016.06.157

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Jung, K., Park, S., Lee, Y., Youn, Y., Shin, H. I., Kim, H. K., Lee, H., & Yi, Y. (2016). Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In ₂ O ₃ and NPB/Sn-doped In ₂ O ₃ Applied Surface Science, 387, 625-630. https://doi.org/10.1016/j.apsusc.2016.06.157

Jung, Kwanwook ; Park, Soohyung ; Lee, Younjoo et al. / Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In ₂ O ₃ and NPB/Sn-doped In ₂ O ₃ In: Applied Surface Science. 2016 ; Vol. 387. pp. 625-630.

@article{f9074ca5473d4dba979a3b42a1c066e7,

title = " Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In 2 O 3 and NPB/Sn-doped In 2 O 3 ",

abstract = " The electronic structures of Ag-doped In 2 O 3 (IAgO) and its energy level alignments with a N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) hole transport layer (HTL) were investigated using in situ ultraviolet and X-ray photoelectron spectroscopies (UPS and XPS). As compared to the conventional Sn-doped In 2 O 3 (ITO), IAgO has less oxygen vacancies leading to a higher work function (WF). The lower hole injection barrier (Φ h ) from IAgO to a NPB HTL is observed, which is attributed mainly to its higher WF and interface dipoles. The UPS measurements reveal that the Φ h is 0.87 eV at NPB/IAgO while 1.11 eV is at NPB/ITO. Therefore, IAgO could be an alternative transparent anode in organic optoelectronics.",

keywords = "Hole injection barrier, IAgO, ITO, NPB, UPS, XPS",

author = "Kwanwook Jung and Soohyung Park and Younjoo Lee and Yungsik Youn and Shin, \{Hae In\} and Kim, \{Han Ki\} and Hyunbok Lee and Yeonjin Yi",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2016",

month = nov,

day = "30",

doi = "10.1016/j.apsusc.2016.06.157",

language = "English",

volume = "387",

pages = "625--630",

journal = "Applied Surface Science",

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Jung, K, Park, S, Lee, Y, Youn, Y, Shin, HI, Kim, HK, Lee, H & Yi, Y 2016, ' Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In ₂ O ₃ and NPB/Sn-doped In ₂ O ₃ ', Applied Surface Science, vol. 387, pp. 625-630. https://doi.org/10.1016/j.apsusc.2016.06.157

Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In ₂ O ₃ and NPB/Sn-doped In ₂ O ₃ . / Jung, Kwanwook; Park, Soohyung; Lee, Younjoo et al.
In: Applied Surface Science, Vol. 387, 30.11.2016, p. 625-630.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In 2 O 3 and NPB/Sn-doped In 2 O 3

AU - Jung, Kwanwook

AU - Park, Soohyung

AU - Lee, Younjoo

AU - Youn, Yungsik

AU - Shin, Hae In

AU - Kim, Han Ki

AU - Lee, Hyunbok

AU - Yi, Yeonjin

PY - 2016/11/30

Y1 - 2016/11/30

N2 - The electronic structures of Ag-doped In 2 O 3 (IAgO) and its energy level alignments with a N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) hole transport layer (HTL) were investigated using in situ ultraviolet and X-ray photoelectron spectroscopies (UPS and XPS). As compared to the conventional Sn-doped In 2 O 3 (ITO), IAgO has less oxygen vacancies leading to a higher work function (WF). The lower hole injection barrier (Φ h ) from IAgO to a NPB HTL is observed, which is attributed mainly to its higher WF and interface dipoles. The UPS measurements reveal that the Φ h is 0.87 eV at NPB/IAgO while 1.11 eV is at NPB/ITO. Therefore, IAgO could be an alternative transparent anode in organic optoelectronics.

AB - The electronic structures of Ag-doped In 2 O 3 (IAgO) and its energy level alignments with a N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) hole transport layer (HTL) were investigated using in situ ultraviolet and X-ray photoelectron spectroscopies (UPS and XPS). As compared to the conventional Sn-doped In 2 O 3 (ITO), IAgO has less oxygen vacancies leading to a higher work function (WF). The lower hole injection barrier (Φ h ) from IAgO to a NPB HTL is observed, which is attributed mainly to its higher WF and interface dipoles. The UPS measurements reveal that the Φ h is 0.87 eV at NPB/IAgO while 1.11 eV is at NPB/ITO. Therefore, IAgO could be an alternative transparent anode in organic optoelectronics.

KW - Hole injection barrier

KW - IAgO

KW - ITO

KW - NPB

KW - UPS

KW - XPS

UR - https://www.scopus.com/pages/publications/84977662585

U2 - 10.1016/j.apsusc.2016.06.157

DO - 10.1016/j.apsusc.2016.06.157

M3 - Article

AN - SCOPUS:84977662585

SN - 0169-4332

VL - 387

SP - 625

EP - 630

JO - Applied Surface Science

JF - Applied Surface Science

ER -

Jung K, Park S, Lee Y, Youn Y, Shin HI, Kim HK et al. Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In ₂ O ₃ and NPB/Sn-doped In ₂ O ₃ Applied Surface Science. 2016 Nov 30;387:625-630. doi: 10.1016/j.apsusc.2016.06.157

Energy level alignments at the interface of N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB)/Ag-doped In ₂ O ₃ and NPB/Sn-doped In ₂ O ₃

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