TY - GEN
T1 - Energy-Efficient Voltage-Induced Self-Regulated Precessional MRAM with Low Write Error Rate <10−9
AU - Sin, Stanislav
AU - Oh, Saeroonter
N1 - Publisher Copyright:
© 2025 IEEE.
PY - 2025
Y1 - 2025
N2 - Voltage-controlled precessional MRAM offers a good power-performance-area balance, positioning it as a promising intermediate memory between SRAM, DRAM, and flash. However, its practical implementation is hindered by the need for highly precise timing control of the incoming voltage pulse, making it susceptible to process, temperature, and other variations, compromising its robustness for memory applications. This study proposes voltage-induced self-regulated precessional (VISP) memory to address this issue. By using angular dependence of MTJ’s resistance, energy asymmetry is created so that the precession is self-terminated without external control. The robustness of switching is evaluated using Fokker-Planck simulations, and it was found that write-error rate < 10−9 can be achieved with a pulse width of ∼ 26 nanoseconds, making VISP well-suited for storage-class memory.
AB - Voltage-controlled precessional MRAM offers a good power-performance-area balance, positioning it as a promising intermediate memory between SRAM, DRAM, and flash. However, its practical implementation is hindered by the need for highly precise timing control of the incoming voltage pulse, making it susceptible to process, temperature, and other variations, compromising its robustness for memory applications. This study proposes voltage-induced self-regulated precessional (VISP) memory to address this issue. By using angular dependence of MTJ’s resistance, energy asymmetry is created so that the precession is self-terminated without external control. The robustness of switching is evaluated using Fokker-Planck simulations, and it was found that write-error rate < 10−9 can be achieved with a pulse width of ∼ 26 nanoseconds, making VISP well-suited for storage-class memory.
KW - MRAM
KW - storage-class memory
KW - VCMA
UR - https://www.scopus.com/pages/publications/105010835208
U2 - 10.1109/EDTM61175.2025.11040867
DO - 10.1109/EDTM61175.2025.11040867
M3 - Conference contribution
AN - SCOPUS:105010835208
T3 - 9th IEEE Electron Devices Technology and Manufacturing Conference: Shaping the Future with Innovations in Devices and Manufacturing, EDTM 2025
BT - 9th IEEE Electron Devices Technology and Manufacturing Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 9th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2025
Y2 - 9 March 2025 through 12 March 2025
ER -