TY - JOUR
T1 - Emulation of synaptic behaviors using amorphous indium-gallium-zinc-oxide-based photoelectric synaptic devices
AU - Lee, Minkyung
AU - Song, Seungho
AU - Kim, Yong Hoon
N1 - Publisher Copyright:
© 2019 The Japan Society of Applied Physics.
PY - 2019
Y1 - 2019
N2 - In this paper, we report the emulation of synaptic functions such as paired-pulse facilitation (PPF), spike-frequency dependent plasticity (SFDP), and spike-duration dependent plasticity (SDDP) using a solution-processed amorphous indium-gallium-zinc oxide (IGZO) photoelectric synaptic device. Particularly, instead of using electrical stimuli, we used an optical stimuli (light pulse) to modulate the synaptic weight of the IGZO photoelectric synaptic device which is equivalent to the conductance of the IGZO active layer. The time interval between the paired pulses, frequency and the pulse duration of the optical stimuli were controlled to emulate the PPF, SFDP, and SDDP behaviors, respectively. Also, we emulated the Ebbinghaus forgetting curve which is related to the memory retention behavior, as another possible demonstration of the IGZO-based photoelectric synaptic device.
AB - In this paper, we report the emulation of synaptic functions such as paired-pulse facilitation (PPF), spike-frequency dependent plasticity (SFDP), and spike-duration dependent plasticity (SDDP) using a solution-processed amorphous indium-gallium-zinc oxide (IGZO) photoelectric synaptic device. Particularly, instead of using electrical stimuli, we used an optical stimuli (light pulse) to modulate the synaptic weight of the IGZO photoelectric synaptic device which is equivalent to the conductance of the IGZO active layer. The time interval between the paired pulses, frequency and the pulse duration of the optical stimuli were controlled to emulate the PPF, SFDP, and SDDP behaviors, respectively. Also, we emulated the Ebbinghaus forgetting curve which is related to the memory retention behavior, as another possible demonstration of the IGZO-based photoelectric synaptic device.
UR - https://www.scopus.com/pages/publications/85072761766
U2 - 10.7567/1347-4065/ab2c2d
DO - 10.7567/1347-4065/ab2c2d
M3 - Article
AN - SCOPUS:85072761766
SN - 0021-4922
VL - 58
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 9
M1 - 090607
ER -