Electronic defect characteristics of pentacene organic thin films deposited on SiO2/Si substrates

Yong Suk Yang; Seong Hyun Kim; Jeong Ik Lee; Hye Yong Chu; Lee Mi Do; Hyoyoung Lee; Jiyoung Oh; Jung Hun Lee; Taehyung Zyung; Min Ki Ryu; Min Su Jang

doi:10.1117/12.457496

Electronic defect characteristics of pentacene organic thin films deposited on SiO₂/Si substrates

Yong Suk Yang, Seong Hyun Kim, Jeong Ik Lee, Hye Yong Chu, Lee Mi Do, Hyoyoung Lee, Jiyoung Oh, Jung Hun Lee, Taehyung Zyung, Min Ki Ryu, Min Su Jang

Electronics and Telecommunications Research Institute

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

Organic thin-film transistors (TFTs) using the pentacene as an active electronic material have shown the mobility of 0.8 cm²/Vs and the grains larger than 1 μm. Deep level transient spectroscopy (DLTS) measurements have been carried out on metal/insulator/organic-semiconductor (MIS) structure devices that have a depletion region at the insulator/organicsemiconductor interface. The very long capacitance transients were measured by the trapping of electronic charge carriers distributed in energy. Based on the DLTS characteristics, the energy levels of hole and electron traps in the obtained pentacene films were approximately E_v + 0.24 eV, E_v + 1.08 eV, E_v + 0.31 eV, and E_c - 0.69 eV.

Original language	English
Pages (from-to)	352-358
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4464
DOIs	https://doi.org/10.1117/12.457496
State	Published - 2002
Externally published	Yes
Event	Organic Light-Emitting Materials and Devices V - San Diego,CA, United States Duration: 30 Jul 2001 → 1 Aug 2001

Keywords

Deep level defect
DLTS
Field-effect mobility
Organic semiconductors
Pentacene
TFT

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This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1117/12.457496

Cite this

@article{bd4bd1617e26486dafca38fee1f2d570,

title = "Electronic defect characteristics of pentacene organic thin films deposited on SiO2/Si substrates",

abstract = "Organic thin-film transistors (TFTs) using the pentacene as an active electronic material have shown the mobility of 0.8 cm2/Vs and the grains larger than 1 μm. Deep level transient spectroscopy (DLTS) measurements have been carried out on metal/insulator/organic-semiconductor (MIS) structure devices that have a depletion region at the insulator/organicsemiconductor interface. The very long capacitance transients were measured by the trapping of electronic charge carriers distributed in energy. Based on the DLTS characteristics, the energy levels of hole and electron traps in the obtained pentacene films were approximately Ev + 0.24 eV, Ev + 1.08 eV, Ev + 0.31 eV, and Ec - 0.69 eV.",

keywords = "Deep level defect, DLTS, Field-effect mobility, Organic semiconductors, Pentacene, TFT",

author = "Yang, \{Yong Suk\} and Kim, \{Seong Hyun\} and Lee, \{Jeong Ik\} and Chu, \{Hye Yong\} and Do, \{Lee Mi\} and Hyoyoung Lee and Jiyoung Oh and Lee, \{Jung Hun\} and Taehyung Zyung and Ryu, \{Min Ki\} and Jang, \{Min Su\}",

year = "2002",

doi = "10.1117/12.457496",

language = "English",

volume = "4464",

pages = "352--358",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Organic Light-Emitting Materials and Devices V ; Conference date: 30-07-2001 Through 01-08-2001",

}

TY - JOUR

T1 - Electronic defect characteristics of pentacene organic thin films deposited on SiO2/Si substrates

AU - Yang, Yong Suk

AU - Kim, Seong Hyun

AU - Lee, Jeong Ik

AU - Chu, Hye Yong

AU - Do, Lee Mi

AU - Lee, Hyoyoung

AU - Oh, Jiyoung

AU - Lee, Jung Hun

AU - Zyung, Taehyung

AU - Ryu, Min Ki

AU - Jang, Min Su

PY - 2002

Y1 - 2002

N2 - Organic thin-film transistors (TFTs) using the pentacene as an active electronic material have shown the mobility of 0.8 cm2/Vs and the grains larger than 1 μm. Deep level transient spectroscopy (DLTS) measurements have been carried out on metal/insulator/organic-semiconductor (MIS) structure devices that have a depletion region at the insulator/organicsemiconductor interface. The very long capacitance transients were measured by the trapping of electronic charge carriers distributed in energy. Based on the DLTS characteristics, the energy levels of hole and electron traps in the obtained pentacene films were approximately Ev + 0.24 eV, Ev + 1.08 eV, Ev + 0.31 eV, and Ec - 0.69 eV.

AB - Organic thin-film transistors (TFTs) using the pentacene as an active electronic material have shown the mobility of 0.8 cm2/Vs and the grains larger than 1 μm. Deep level transient spectroscopy (DLTS) measurements have been carried out on metal/insulator/organic-semiconductor (MIS) structure devices that have a depletion region at the insulator/organicsemiconductor interface. The very long capacitance transients were measured by the trapping of electronic charge carriers distributed in energy. Based on the DLTS characteristics, the energy levels of hole and electron traps in the obtained pentacene films were approximately Ev + 0.24 eV, Ev + 1.08 eV, Ev + 0.31 eV, and Ec - 0.69 eV.

KW - Deep level defect

KW - DLTS

KW - Field-effect mobility

KW - Organic semiconductors

KW - Pentacene

KW - TFT

UR - https://www.scopus.com/pages/publications/1542483887

U2 - 10.1117/12.457496

DO - 10.1117/12.457496

M3 - Conference article

AN - SCOPUS:1542483887

SN - 0277-786X

VL - 4464

SP - 352

EP - 358

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Organic Light-Emitting Materials and Devices V

Y2 - 30 July 2001 through 1 August 2001

ER -