Electron-phonon and electron-electron interactions in one-dimensional GaAs quantum wire nanostructures

E. H. Hwang; S. Das Sarma

doi:10.1006/spmi.1996.0133

Electron-phonon and electron-electron interactions in one-dimensional GaAs quantum wire nanostructures

E. H. Hwang
, S. Das Sarma

University of Maryland, College Park

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We investigate quasiparticle damping rates and hot electron inelastic mean free paths for different confinement sizes and electron densities in the ID quantum limit of a doped polar semiconductor (GaAs) quantum wire nanostructure. In this calculation the leading order dynamical screening approximation and random phase approximation are used.

Original language	English
Pages (from-to)	1-5
Number of pages	5
Journal	Superlattices and Microstructures
Volume	21
Issue number	1
DOIs	https://doi.org/10.1006/spmi.1996.0133
State	Published - Jan 1997
Externally published	Yes

Keywords

Doped GaAs quantum wire
Electron-phonon and electron-electron interactions
Inelastic scattering rate
Plasmon-phonon coupling

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10.1006/spmi.1996.0133

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title = "Electron-phonon and electron-electron interactions in one-dimensional GaAs quantum wire nanostructures",

abstract = "We investigate quasiparticle damping rates and hot electron inelastic mean free paths for different confinement sizes and electron densities in the ID quantum limit of a doped polar semiconductor (GaAs) quantum wire nanostructure. In this calculation the leading order dynamical screening approximation and random phase approximation are used.",

keywords = "Doped GaAs quantum wire, Electron-phonon and electron-electron interactions, Inelastic scattering rate, Plasmon-phonon coupling",

author = "Hwang, \{E. H.\} and \{Das Sarma\}, S.",

year = "1997",

month = jan,

doi = "10.1006/spmi.1996.0133",

language = "English",

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T1 - Electron-phonon and electron-electron interactions in one-dimensional GaAs quantum wire nanostructures

AU - Hwang, E. H.

AU - Das Sarma, S.

PY - 1997/1

Y1 - 1997/1

N2 - We investigate quasiparticle damping rates and hot electron inelastic mean free paths for different confinement sizes and electron densities in the ID quantum limit of a doped polar semiconductor (GaAs) quantum wire nanostructure. In this calculation the leading order dynamical screening approximation and random phase approximation are used.

AB - We investigate quasiparticle damping rates and hot electron inelastic mean free paths for different confinement sizes and electron densities in the ID quantum limit of a doped polar semiconductor (GaAs) quantum wire nanostructure. In this calculation the leading order dynamical screening approximation and random phase approximation are used.

KW - Doped GaAs quantum wire

KW - Electron-phonon and electron-electron interactions

KW - Inelastic scattering rate

KW - Plasmon-phonon coupling

UR - https://www.scopus.com/pages/publications/30244515410

U2 - 10.1006/spmi.1996.0133

DO - 10.1006/spmi.1996.0133

M3 - Article

AN - SCOPUS:30244515410

SN - 0749-6036

VL - 21

SP - 1

EP - 5

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 1

ER -

Electron-phonon and electron-electron interactions in one-dimensional GaAs quantum wire nanostructures

Abstract

Keywords

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