Electron focusing in two-dimensional electron gases grown on (311)B GaAs substrates

A. C. Churchill; G. H. Kim; M. Y. Simmons; D. A. Ritchie; G. A.C. Jones

doi:10.1103/PhysRevB.50.17636

Electron focusing in two-dimensional electron gases grown on (311)B GaAs substrates

A. C. Churchill, G. H. Kim, M. Y. Simmons, D. A. Ritchie, G. A.C. Jones

University of Cambridge

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2 Scopus citations

Abstract

We present a study of electron focusing in two-dimensional electron gases grown on (311)-orientated GaAs substrates. The electronic properties of electron and hole gases grown on (311)-orientated GaAs substrates have anisotropic behavior in the orthogonal [2̄33] and [011̄] directions, however, the electron focusing results presented demonstrate anisotropic effective mass and Fermi surface even though the mobility is anisotropic. We also determine the ballistic length for the electrons.

Original language	English
Pages (from-to)	17636-17638
Number of pages	3
Journal	Physical Review B
Volume	50
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.50.17636
State	Published - 1994
Externally published	Yes

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title = "Electron focusing in two-dimensional electron gases grown on (311)B GaAs substrates",

abstract = "We present a study of electron focusing in two-dimensional electron gases grown on (311)-orientated GaAs substrates. The electronic properties of electron and hole gases grown on (311)-orientated GaAs substrates have anisotropic behavior in the orthogonal [{\=2}33] and [01{\=1}] directions, however, the electron focusing results presented demonstrate anisotropic effective mass and Fermi surface even though the mobility is anisotropic. We also determine the ballistic length for the electrons.",

author = "Churchill, \{A. C.\} and Kim, \{G. H.\} and Simmons, \{M. Y.\} and Ritchie, \{D. A.\} and Jones, \{G. A.C.\}",

year = "1994",

doi = "10.1103/PhysRevB.50.17636",

language = "English",

volume = "50",

pages = "17636--17638",

journal = "Physical Review B",

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AU - Churchill, A. C.

AU - Kim, G. H.

AU - Simmons, M. Y.

AU - Ritchie, D. A.

AU - Jones, G. A.C.

PY - 1994

Y1 - 1994

N2 - We present a study of electron focusing in two-dimensional electron gases grown on (311)-orientated GaAs substrates. The electronic properties of electron and hole gases grown on (311)-orientated GaAs substrates have anisotropic behavior in the orthogonal [2̄33] and [011̄] directions, however, the electron focusing results presented demonstrate anisotropic effective mass and Fermi surface even though the mobility is anisotropic. We also determine the ballistic length for the electrons.

AB - We present a study of electron focusing in two-dimensional electron gases grown on (311)-orientated GaAs substrates. The electronic properties of electron and hole gases grown on (311)-orientated GaAs substrates have anisotropic behavior in the orthogonal [2̄33] and [011̄] directions, however, the electron focusing results presented demonstrate anisotropic effective mass and Fermi surface even though the mobility is anisotropic. We also determine the ballistic length for the electrons.

UR - https://www.scopus.com/pages/publications/0542372163

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DO - 10.1103/PhysRevB.50.17636

M3 - Article

AN - SCOPUS:0542372163

SN - 0163-1829

VL - 50

SP - 17636

EP - 17638

JO - Physical Review B

JF - Physical Review B

IS - 23

ER -

Electron focusing in two-dimensional electron gases grown on (311)B GaAs substrates

Abstract

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