Electron-beam-resist-free interference-type hexagonal boron nitride/chemical vapor deposition graphene/hexagonal boron nitride electronic devices

We report fabrication and measurements of hexagonal boron nitride (h-BN)/chemical vapor deposition (CVD) graphene/h-BN heterostructure devices without using expensive, time-consuming electron-beam lithography and toxic carbon tetrafluoride or sulfur tetrafluoride etching. We use efficient transfer of h-BN/CVD graphene by polypropylene carbonate onto a pre-prepared metal contacts/h-BN/SiO₂ substrate. In this case, CVD-graphene is suspended from the h-BN substrate which allows efficient gas annealing process for improving the device mobility. Interestingly, we find that the top h-BN capping layer could enhance the carrier interference effect in CVD graphene, a great advantage for low-cost graphene-based interference-type electronic devices.