Electrical properties of the MOS structures using strained (Ba 0.5,Sr0.5)TiO3 thin films

Sungjin Jun; Yonghan Roh; Jaichan Lee

doi:10.1080/00150190108008747

Electrical properties of the MOS structures using strained (Ba _0.5,Sr_0.5)TiO₃ thin films

Sungjin Jun, Yonghan Roh, Jaichan Lee

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Conference article › peer-review

Abstract

The metal-ferroelectric-insulator-semiconductor (MFIS) structures with a strained (Ba,Sr)TiO₃ (BST) thin film have been prepared. Strained BST films represented memory function although BST is at a paraelectric composition. Electrical and interface properties was further studied using high-frequency capacitance-voltage (HF C-V) measurement. Strained BST showed the hysteresis of 0.6 V in HF C-V. DC bias voltage stress results in the asymmetric shift of a flat-band voltage affected by polarization pinning. The polarization pinning in the strained BST film is caused by the bounded charges injected from Si. This polarization pinning reduced polarization reversal and further caused the asymmetric shift of the flatband voltage.

Original language	English
Pages (from-to)	269-275
Number of pages	7
Journal	Ferroelectrics
Volume	259
Issue number	1
DOIs	https://doi.org/10.1080/00150190108008747
State	Published - 2001
Event	3rd Asian Meeting on Ferroelectrics, AMF-3 - Hong Kong, China Duration: 12 Dec 2002 → 15 Dec 2002

Keywords

BST
MFIS
POLARIZATION PINNING
STRAIN

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10.1080/00150190108008747

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title = "Electrical properties of the MOS structures using strained (Ba 0.5,Sr0.5)TiO3 thin films",

abstract = "The metal-ferroelectric-insulator-semiconductor (MFIS) structures with a strained (Ba,Sr)TiO3 (BST) thin film have been prepared. Strained BST films represented memory function although BST is at a paraelectric composition. Electrical and interface properties was further studied using high-frequency capacitance-voltage (HF C-V) measurement. Strained BST showed the hysteresis of 0.6 V in HF C-V. DC bias voltage stress results in the asymmetric shift of a flat-band voltage affected by polarization pinning. The polarization pinning in the strained BST film is caused by the bounded charges injected from Si. This polarization pinning reduced polarization reversal and further caused the asymmetric shift of the flatband voltage.",

keywords = "BST, MFIS, POLARIZATION PINNING, STRAIN",

author = "Sungjin Jun and Yonghan Roh and Jaichan Lee",

year = "2001",

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language = "English",

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pages = "269--275",

journal = "Ferroelectrics",

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number = "1",

note = "3rd Asian Meeting on Ferroelectrics, AMF-3 ; Conference date: 12-12-2002 Through 15-12-2002",

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TY - JOUR

T1 - Electrical properties of the MOS structures using strained (Ba 0.5,Sr0.5)TiO3 thin films

AU - Jun, Sungjin

AU - Roh, Yonghan

AU - Lee, Jaichan

PY - 2001

Y1 - 2001

N2 - The metal-ferroelectric-insulator-semiconductor (MFIS) structures with a strained (Ba,Sr)TiO3 (BST) thin film have been prepared. Strained BST films represented memory function although BST is at a paraelectric composition. Electrical and interface properties was further studied using high-frequency capacitance-voltage (HF C-V) measurement. Strained BST showed the hysteresis of 0.6 V in HF C-V. DC bias voltage stress results in the asymmetric shift of a flat-band voltage affected by polarization pinning. The polarization pinning in the strained BST film is caused by the bounded charges injected from Si. This polarization pinning reduced polarization reversal and further caused the asymmetric shift of the flatband voltage.

AB - The metal-ferroelectric-insulator-semiconductor (MFIS) structures with a strained (Ba,Sr)TiO3 (BST) thin film have been prepared. Strained BST films represented memory function although BST is at a paraelectric composition. Electrical and interface properties was further studied using high-frequency capacitance-voltage (HF C-V) measurement. Strained BST showed the hysteresis of 0.6 V in HF C-V. DC bias voltage stress results in the asymmetric shift of a flat-band voltage affected by polarization pinning. The polarization pinning in the strained BST film is caused by the bounded charges injected from Si. This polarization pinning reduced polarization reversal and further caused the asymmetric shift of the flatband voltage.

KW - BST

KW - MFIS

KW - POLARIZATION PINNING

KW - STRAIN

UR - https://www.scopus.com/pages/publications/78649396982

U2 - 10.1080/00150190108008747

DO - 10.1080/00150190108008747

M3 - Conference article

AN - SCOPUS:78649396982

SN - 0015-0193

VL - 259

SP - 269

EP - 275

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1

T2 - 3rd Asian Meeting on Ferroelectrics, AMF-3

Y2 - 12 December 2002 through 15 December 2002

ER -

Electrical properties of the MOS structures using strained (Ba _0.5,Sr_0.5)TiO₃ thin films

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Keywords

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