Electrical Properties of solution-processed nanolaminates of ZrO2 and Al2O3 as gate insulator materials for thin-film transistors

Hyunwoo Kim; Sangsub Kim; Hyunki Kim; Jaeseob Lee; Sangsoo Kim; Byoungdeog Choi

doi:10.1166/jnn.2017.14741

Electrical Properties of solution-processed nanolaminates of ZrO₂ and Al₂O₃ as gate insulator materials for thin-film transistors

Hyunwoo Kim
, Sangsub Kim
, Hyunki Kim
, Jaeseob Lee
, Sangsoo Kim
, Byoungdeog Choi

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We investigated the electrical properties of solution-processed nanolaminates composed of zirconium oxide (ZrO₂ and aluminum oxide (Al₂O₃ as gate insulator materials for thin-film transistors (TFTs). We fabricated MOS capacitors using Al₂O₃/ZrO₂/Al₂O₃ and ZrO₂/Al₂O₃/ZrO₂ nanolaminate stacks through solution processing. The fabricated nanolaminates showed low leakage current densities and high dielectric constant of ZrO₂ (>20) and the high band gap energy of Al₂O₃ (8.9 eV), which generates a large band offset between the gate insulator and active layer to effectively block the leakage current.

Original language	English
Pages (from-to)	7209-7213
Number of pages	5
Journal	Journal of Nanoscience and Nanotechnology
Volume	17
Issue number	10
DOIs	https://doi.org/10.1166/jnn.2017.14741
State	Published - Oct 2017

Keywords

AlO
Nanolaminate
Solution Processing
Thin-Film Transistor
ZrO

Access to Document

10.1166/jnn.2017.14741

Cite this

@article{61c2f3720f7843599fb97e15424eadeb,

title = "Electrical Properties of solution-processed nanolaminates of ZrO2 and Al2O3 as gate insulator materials for thin-film transistors",

abstract = "We investigated the electrical properties of solution-processed nanolaminates composed of zirconium oxide (ZrO2 and aluminum oxide (Al2O3 as gate insulator materials for thin-film transistors (TFTs). We fabricated MOS capacitors using Al2O3/ZrO2/Al2O3 and ZrO2/Al2O3/ZrO2 nanolaminate stacks through solution processing. The fabricated nanolaminates showed low leakage current densities and high dielectric constant of ZrO2 (>20) and the high band gap energy of Al2O3 (8.9 eV), which generates a large band offset between the gate insulator and active layer to effectively block the leakage current.",

keywords = "AlO, Nanolaminate, Solution Processing, Thin-Film Transistor, ZrO",

author = "Hyunwoo Kim and Sangsub Kim and Hyunki Kim and Jaeseob Lee and Sangsoo Kim and Byoungdeog Choi",

year = "2017",

month = oct,

doi = "10.1166/jnn.2017.14741",

language = "English",

volume = "17",

pages = "7209--7213",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "10",

}

TY - JOUR

T1 - Electrical Properties of solution-processed nanolaminates of ZrO2 and Al2O3 as gate insulator materials for thin-film transistors

AU - Kim, Hyunwoo

AU - Kim, Sangsub

AU - Kim, Hyunki

AU - Lee, Jaeseob

AU - Kim, Sangsoo

AU - Choi, Byoungdeog

PY - 2017/10

Y1 - 2017/10

N2 - We investigated the electrical properties of solution-processed nanolaminates composed of zirconium oxide (ZrO2 and aluminum oxide (Al2O3 as gate insulator materials for thin-film transistors (TFTs). We fabricated MOS capacitors using Al2O3/ZrO2/Al2O3 and ZrO2/Al2O3/ZrO2 nanolaminate stacks through solution processing. The fabricated nanolaminates showed low leakage current densities and high dielectric constant of ZrO2 (>20) and the high band gap energy of Al2O3 (8.9 eV), which generates a large band offset between the gate insulator and active layer to effectively block the leakage current.

AB - We investigated the electrical properties of solution-processed nanolaminates composed of zirconium oxide (ZrO2 and aluminum oxide (Al2O3 as gate insulator materials for thin-film transistors (TFTs). We fabricated MOS capacitors using Al2O3/ZrO2/Al2O3 and ZrO2/Al2O3/ZrO2 nanolaminate stacks through solution processing. The fabricated nanolaminates showed low leakage current densities and high dielectric constant of ZrO2 (>20) and the high band gap energy of Al2O3 (8.9 eV), which generates a large band offset between the gate insulator and active layer to effectively block the leakage current.

KW - AlO

KW - Nanolaminate

KW - Solution Processing

KW - Thin-Film Transistor

KW - ZrO

UR - https://www.scopus.com/pages/publications/85025821938

U2 - 10.1166/jnn.2017.14741

DO - 10.1166/jnn.2017.14741

M3 - Article

AN - SCOPUS:85025821938

SN - 1533-4880

VL - 17

SP - 7209

EP - 7213

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 10

ER -

Electrical Properties of solution-processed nanolaminates of ZrO₂ and Al₂O₃ as gate insulator materials for thin-film transistors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this