Electrical properties of magnesium incorporated zinc tin oxide thin film transistors by solution process

In Young Jeon; Ji Yoon Lee; Dae Ho Yoon

doi:10.1166/jnn.2013.6710

Electrical properties of magnesium incorporated zinc tin oxide thin film transistors by solution process

In Young Jeon, Ji Yoon Lee, Dae Ho Yoon

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Zinc tin oxide (ZTO) films were fabricated on SiO₂/Si substrate as a function of Mg concentration (the ratio of 3 to 10 atomic%) using a spin-coating process. For the characterization of thin film transistors (TFTs), Zn_0.3Sn_0.7O channel TFT exhibited a higher on/off ratio compared to Zn_0.5 Sn_0.5O channel TFT because the higher Sn concentration can induce more charge carriers. 3 atomic% Mg incorporated Zn_0.3Sn_0.7O channel TFTs showed stable electrical performances such as I_on/off ∼ 1×10⁷, μsat = 1.40 cm² V^-1 s^-1, and S = 0.39 V/decade. However, 10 atomic% Mg incorporated Zn_0.3Sn_0.7O channel TFTs deteriorated their electrical performances due to Mg segregation. The Mg incorporated Zn_0.3Sn_0.7O channel TFTs effectively suppress off-current and threshold voltage change during positive gate bias stress due to their strong bonding with oxygen.

Original language	English
Pages (from-to)	1741-1745
Number of pages	5
Journal	Journal of Nanoscience and Nanotechnology
Volume	13
Issue number	3
DOIs	https://doi.org/10.1166/jnn.2013.6710
State	Published - Mar 2013

Keywords

Magnesium zinc tin oxide
Oxide semiconductor
Sol-gel
Thin film transistor

Access to Document

10.1166/jnn.2013.6710

Cite this

@article{10fb516e366e46e08d2c0e41122a38e3,

title = "Electrical properties of magnesium incorporated zinc tin oxide thin film transistors by solution process",

abstract = "Zinc tin oxide (ZTO) films were fabricated on SiO2/Si substrate as a function of Mg concentration (the ratio of 3 to 10 atomic\%) using a spin-coating process. For the characterization of thin film transistors (TFTs), Zn0.3Sn0.7O channel TFT exhibited a higher on/off ratio compared to Zn0.5 Sn0.5O channel TFT because the higher Sn concentration can induce more charge carriers. 3 atomic\% Mg incorporated Zn0.3Sn0.7O channel TFTs showed stable electrical performances such as Ion/off ∼ 1×107, μsat = 1.40 cm2 V-1 s-1, and S = 0.39 V/decade. However, 10 atomic\% Mg incorporated Zn0.3Sn0.7O channel TFTs deteriorated their electrical performances due to Mg segregation. The Mg incorporated Zn0.3Sn0.7O channel TFTs effectively suppress off-current and threshold voltage change during positive gate bias stress due to their strong bonding with oxygen.",

keywords = "Magnesium zinc tin oxide, Oxide semiconductor, Sol-gel, Thin film transistor",

author = "Jeon, \{In Young\} and Lee, \{Ji Yoon\} and Yoon, \{Dae Ho\}",

year = "2013",

month = mar,

doi = "10.1166/jnn.2013.6710",

language = "English",

volume = "13",

pages = "1741--1745",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "3",

}

TY - JOUR

T1 - Electrical properties of magnesium incorporated zinc tin oxide thin film transistors by solution process

AU - Jeon, In Young

AU - Lee, Ji Yoon

AU - Yoon, Dae Ho

PY - 2013/3

Y1 - 2013/3

N2 - Zinc tin oxide (ZTO) films were fabricated on SiO2/Si substrate as a function of Mg concentration (the ratio of 3 to 10 atomic%) using a spin-coating process. For the characterization of thin film transistors (TFTs), Zn0.3Sn0.7O channel TFT exhibited a higher on/off ratio compared to Zn0.5 Sn0.5O channel TFT because the higher Sn concentration can induce more charge carriers. 3 atomic% Mg incorporated Zn0.3Sn0.7O channel TFTs showed stable electrical performances such as Ion/off ∼ 1×107, μsat = 1.40 cm2 V-1 s-1, and S = 0.39 V/decade. However, 10 atomic% Mg incorporated Zn0.3Sn0.7O channel TFTs deteriorated their electrical performances due to Mg segregation. The Mg incorporated Zn0.3Sn0.7O channel TFTs effectively suppress off-current and threshold voltage change during positive gate bias stress due to their strong bonding with oxygen.

AB - Zinc tin oxide (ZTO) films were fabricated on SiO2/Si substrate as a function of Mg concentration (the ratio of 3 to 10 atomic%) using a spin-coating process. For the characterization of thin film transistors (TFTs), Zn0.3Sn0.7O channel TFT exhibited a higher on/off ratio compared to Zn0.5 Sn0.5O channel TFT because the higher Sn concentration can induce more charge carriers. 3 atomic% Mg incorporated Zn0.3Sn0.7O channel TFTs showed stable electrical performances such as Ion/off ∼ 1×107, μsat = 1.40 cm2 V-1 s-1, and S = 0.39 V/decade. However, 10 atomic% Mg incorporated Zn0.3Sn0.7O channel TFTs deteriorated their electrical performances due to Mg segregation. The Mg incorporated Zn0.3Sn0.7O channel TFTs effectively suppress off-current and threshold voltage change during positive gate bias stress due to their strong bonding with oxygen.

KW - Magnesium zinc tin oxide

KW - Oxide semiconductor

KW - Sol-gel

KW - Thin film transistor

UR - https://www.scopus.com/pages/publications/84876241135

U2 - 10.1166/jnn.2013.6710

DO - 10.1166/jnn.2013.6710

M3 - Article

AN - SCOPUS:84876241135

SN - 1533-4880

VL - 13

SP - 1741

EP - 1745

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 3

ER -

Electrical properties of magnesium incorporated zinc tin oxide thin film transistors by solution process

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this