Electrical charging of Au nanoparticles embedded by streptavidin-biotin biomolecular binding in organic memory device

Sung Mok Jung; Hyung Jun Kim; Bong Jin Kim; Hyun Ho Lee; Yong Sang Kim; Tae Sik Yoon

doi:10.1109/18.256519

Electrical charging of Au nanoparticles embedded by streptavidin-biotin biomolecular binding in organic memory device

Sung Mok Jung, Hyung Jun Kim, Bong Jin Kim, Hyun Ho Lee, Yong Sang Kim, Tae Sik Yoon

Myongji University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

In this study, electrical charging phenomena in an organic memory structure using Au nanoparticles (NPs) conjugated with a specific binding mechanism were demonstrated. Monolayer of streptavidin-passivated Au NPs was incorporated on biotin-coated Si0₂ in structure of metal-pentacene-insulator-silicon (MPIS) device. Clockwise and counter-clockwise capacitance-voltage (C-V) hysteresis loops were measured depending on the oxide thickness. For 30 nm, a clockwise C-V hysteresis having memory window of O.68 V was obtained under (+/-) 12 V sweep range, while a counter-clockwise C-V hysteresis having memory window of 6.47 V was obtained under (+/-)7 V sweep range for 10 nm thick oxide.

Original language	English
Pages (from-to)	1071-1076
Number of pages	6
Journal	IEEE Transactions on Information Theory
Volume	39
Issue number	3
DOIs	https://doi.org/10.1109/18.256519
State	Published - 1993
Externally published	Yes

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title = "Electrical charging of Au nanoparticles embedded by streptavidin-biotin biomolecular binding in organic memory device",

abstract = "In this study, electrical charging phenomena in an organic memory structure using Au nanoparticles (NPs) conjugated with a specific binding mechanism were demonstrated. Monolayer of streptavidin-passivated Au NPs was incorporated on biotin-coated Si02 in structure of metal-pentacene-insulator-silicon (MPIS) device. Clockwise and counter-clockwise capacitance-voltage (C-V) hysteresis loops were measured depending on the oxide thickness. For 30 nm, a clockwise C-V hysteresis having memory window of O.68 V was obtained under (+/-) 12 V sweep range, while a counter-clockwise C-V hysteresis having memory window of 6.47 V was obtained under (+/-)7 V sweep range for 10 nm thick oxide.",

author = "Jung, \{Sung Mok\} and Kim, \{Hyung Jun\} and Kim, \{Bong Jin\} and Lee, \{Hyun Ho\} and Kim, \{Yong Sang\} and Yoon, \{Tae Sik\}",

year = "1993",

doi = "10.1109/18.256519",

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volume = "39",

pages = "1071--1076",

journal = "IEEE Transactions on Information Theory",

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T1 - Electrical charging of Au nanoparticles embedded by streptavidin-biotin biomolecular binding in organic memory device

AU - Jung, Sung Mok

AU - Kim, Hyung Jun

AU - Kim, Bong Jin

AU - Lee, Hyun Ho

AU - Kim, Yong Sang

AU - Yoon, Tae Sik

PY - 1993

Y1 - 1993

N2 - In this study, electrical charging phenomena in an organic memory structure using Au nanoparticles (NPs) conjugated with a specific binding mechanism were demonstrated. Monolayer of streptavidin-passivated Au NPs was incorporated on biotin-coated Si02 in structure of metal-pentacene-insulator-silicon (MPIS) device. Clockwise and counter-clockwise capacitance-voltage (C-V) hysteresis loops were measured depending on the oxide thickness. For 30 nm, a clockwise C-V hysteresis having memory window of O.68 V was obtained under (+/-) 12 V sweep range, while a counter-clockwise C-V hysteresis having memory window of 6.47 V was obtained under (+/-)7 V sweep range for 10 nm thick oxide.

AB - In this study, electrical charging phenomena in an organic memory structure using Au nanoparticles (NPs) conjugated with a specific binding mechanism were demonstrated. Monolayer of streptavidin-passivated Au NPs was incorporated on biotin-coated Si02 in structure of metal-pentacene-insulator-silicon (MPIS) device. Clockwise and counter-clockwise capacitance-voltage (C-V) hysteresis loops were measured depending on the oxide thickness. For 30 nm, a clockwise C-V hysteresis having memory window of O.68 V was obtained under (+/-) 12 V sweep range, while a counter-clockwise C-V hysteresis having memory window of 6.47 V was obtained under (+/-)7 V sweep range for 10 nm thick oxide.

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EP - 1076

JO - IEEE Transactions on Information Theory

JF - IEEE Transactions on Information Theory

IS - 3

ER -

Electrical charging of Au nanoparticles embedded by streptavidin-biotin biomolecular binding in organic memory device

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