Electrical characteristics of the backgated bottom-up silicon nanowire FETs

Duksoo Kim; Youngchai Jung; Miyoung Park; Byungsung Kim; Suheon Hong; Minsu Choi; Myunggil Kang; Yunseop Yu; Dongmok Whang; Sungwoo Hwang

doi:10.1109/TNANO.2008.2005636

Electrical characteristics of the backgated bottom-up silicon nanowire FETs

Duksoo Kim, Youngchai Jung, Miyoung Park, Byungsung Kim, Suheon Hong, Minsu Choi, Myunggil Kang, Yunseop Yu, Dongmok Whang, Sungwoo Hwang

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We report the electrical characteristics of backgated silicon nanowire (SiNW) FETs at temperatures ranging from 300 to 160 K. The voltage drop along the intrinsic part of the silicon nanowire (SiNW) was obtained by modeling the source/drain contacts as Schottky diodes. The field effect mobility values obtained from the extracted intrinsic voltage drop showed activation behaviors in the given temperature range. The activation energy was smaller than that of previously reported Ge nanowires.

Original language	English
Article number	4627459
Pages (from-to)	683-687
Number of pages	5
Journal	IEEE Transactions on Nanotechnology
Volume	7
Issue number	6
DOIs	https://doi.org/10.1109/TNANO.2008.2005636
State	Published - Nov 2008

Keywords

Back gate
Contact resistance
Mobility extraction
Silicon nanowire (SiNW) FET

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10.1109/TNANO.2008.2005636

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title = "Electrical characteristics of the backgated bottom-up silicon nanowire FETs",

abstract = "We report the electrical characteristics of backgated silicon nanowire (SiNW) FETs at temperatures ranging from 300 to 160 K. The voltage drop along the intrinsic part of the silicon nanowire (SiNW) was obtained by modeling the source/drain contacts as Schottky diodes. The field effect mobility values obtained from the extracted intrinsic voltage drop showed activation behaviors in the given temperature range. The activation energy was smaller than that of previously reported Ge nanowires.",

keywords = "Back gate, Contact resistance, Mobility extraction, Silicon nanowire (SiNW) FET",

author = "Duksoo Kim and Youngchai Jung and Miyoung Park and Byungsung Kim and Suheon Hong and Minsu Choi and Myunggil Kang and Yunseop Yu and Dongmok Whang and Sungwoo Hwang",

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T1 - Electrical characteristics of the backgated bottom-up silicon nanowire FETs

AU - Kim, Duksoo

AU - Jung, Youngchai

AU - Park, Miyoung

AU - Kim, Byungsung

AU - Hong, Suheon

AU - Choi, Minsu

AU - Kang, Myunggil

AU - Yu, Yunseop

AU - Whang, Dongmok

AU - Hwang, Sungwoo

PY - 2008/11

Y1 - 2008/11

N2 - We report the electrical characteristics of backgated silicon nanowire (SiNW) FETs at temperatures ranging from 300 to 160 K. The voltage drop along the intrinsic part of the silicon nanowire (SiNW) was obtained by modeling the source/drain contacts as Schottky diodes. The field effect mobility values obtained from the extracted intrinsic voltage drop showed activation behaviors in the given temperature range. The activation energy was smaller than that of previously reported Ge nanowires.

AB - We report the electrical characteristics of backgated silicon nanowire (SiNW) FETs at temperatures ranging from 300 to 160 K. The voltage drop along the intrinsic part of the silicon nanowire (SiNW) was obtained by modeling the source/drain contacts as Schottky diodes. The field effect mobility values obtained from the extracted intrinsic voltage drop showed activation behaviors in the given temperature range. The activation energy was smaller than that of previously reported Ge nanowires.

KW - Back gate

KW - Contact resistance

KW - Mobility extraction

KW - Silicon nanowire (SiNW) FET

UR - https://www.scopus.com/pages/publications/58149269278

U2 - 10.1109/TNANO.2008.2005636

DO - 10.1109/TNANO.2008.2005636

M3 - Article

AN - SCOPUS:58149269278

SN - 1536-125X

VL - 7

SP - 683

EP - 687

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 6

M1 - 4627459

ER -

Electrical characteristics of the backgated bottom-up silicon nanowire FETs

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Keywords

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