Electrical characteristics of the back-gated bottom-up silicon nanowire field effect transistor

Duk Soo Kim; Young Chai Jung; Mi Young Park; Byung Sung Kim; Su Heon Hong; Min Su Choi; Myung Gii Kang; Yun Seop Yu; Dong Mok Whang; Sung Woo Hwang

doi:10.1109/SNW.2008.5418412

Electrical characteristics of the back-gated bottom-up silicon nanowire field effect transistor

Duk Soo Kim
, Young Chai Jung
, Mi Young Park
, Byung Sung Kim
, Su Heon Hong
, Min Su Choi
, Myung Gii Kang
, Yun Seop Yu
, Dong Mok Whang
, Sung Woo Hwang

Department of Advanced Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report electrical characteristics of back-gated silicon nanowire field effect transistors (SNWFETs) fabricated using silicon nanowires synthesized by a standard vapor-liquid-solid process. It is shown that the mobilities obtained from the measured transconductances are reasonable only when the nanowire is fully depleted.

Original language	English
Title of host publication	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
DOIs	https://doi.org/10.1109/SNW.2008.5418412
State	Published - 2008
Event	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 - Honolulu, HI, United States Duration: 15 Jun 2008 → 16 Jun 2008

Publication series

Name	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

Conference

Conference	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
Country/Territory	United States
City	Honolulu, HI
Period	15/06/08 → 16/06/08

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10.1109/SNW.2008.5418412

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Kim, D. S., Jung, Y. C., Park, M. Y., Kim, B. S., Hong, S. H., Choi, M. S., Kang, M. G., Yu, Y. S., Whang, D. M., & Hwang, S. W. (2008). Electrical characteristics of the back-gated bottom-up silicon nanowire field effect transistor. In IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 Article 5418412 (IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008). https://doi.org/10.1109/SNW.2008.5418412

@inproceedings{5cccca9934ed40d9a78449a6341a5f56,

title = "Electrical characteristics of the back-gated bottom-up silicon nanowire field effect transistor",

abstract = "We report electrical characteristics of back-gated silicon nanowire field effect transistors (SNWFETs) fabricated using silicon nanowires synthesized by a standard vapor-liquid-solid process. It is shown that the mobilities obtained from the measured transconductances are reasonable only when the nanowire is fully depleted.",

author = "Kim, \{Duk Soo\} and Jung, \{Young Chai\} and Park, \{Mi Young\} and Kim, \{Byung Sung\} and Hong, \{Su Heon\} and Choi, \{Min Su\} and Kang, \{Myung Gii\} and Yu, \{Yun Seop\} and Whang, \{Dong Mok\} and Hwang, \{Sung Woo\}",

year = "2008",

doi = "10.1109/SNW.2008.5418412",

language = "English",

isbn = "9781424420711",

series = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008",

booktitle = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008",

note = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 ; Conference date: 15-06-2008 Through 16-06-2008",

}

Kim, DS, Jung, YC, Park, MY, Kim, BS, Hong, SH, Choi, MS, Kang, MG, Yu, YS, Whang, DM & Hwang, SW 2008, Electrical characteristics of the back-gated bottom-up silicon nanowire field effect transistor. in IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008., 5418412, IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008, IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008, Honolulu, HI, United States, 15/06/08. https://doi.org/10.1109/SNW.2008.5418412

Electrical characteristics of the back-gated bottom-up silicon nanowire field effect transistor. / Kim, Duk Soo; Jung, Young Chai; Park, Mi Young et al.
IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008. 2008. 5418412 (IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Electrical characteristics of the back-gated bottom-up silicon nanowire field effect transistor

AU - Kim, Duk Soo

AU - Jung, Young Chai

AU - Park, Mi Young

AU - Kim, Byung Sung

AU - Hong, Su Heon

AU - Choi, Min Su

AU - Kang, Myung Gii

AU - Yu, Yun Seop

AU - Whang, Dong Mok

AU - Hwang, Sung Woo

PY - 2008

Y1 - 2008

N2 - We report electrical characteristics of back-gated silicon nanowire field effect transistors (SNWFETs) fabricated using silicon nanowires synthesized by a standard vapor-liquid-solid process. It is shown that the mobilities obtained from the measured transconductances are reasonable only when the nanowire is fully depleted.

AB - We report electrical characteristics of back-gated silicon nanowire field effect transistors (SNWFETs) fabricated using silicon nanowires synthesized by a standard vapor-liquid-solid process. It is shown that the mobilities obtained from the measured transconductances are reasonable only when the nanowire is fully depleted.

UR - https://www.scopus.com/pages/publications/77949973185

U2 - 10.1109/SNW.2008.5418412

DO - 10.1109/SNW.2008.5418412

M3 - Conference contribution

AN - SCOPUS:77949973185

SN - 9781424420711

T3 - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

BT - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

T2 - IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

Y2 - 15 June 2008 through 16 June 2008

ER -

Electrical characteristics of the back-gated bottom-up silicon nanowire field effect transistor

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