Electrical Characteristics of Solution-processed Hafnium-aluminum Oxide Gate Insulator with Addition of Hydrochloric Acid for a-IGZO Thin-Film Transistors

Jeong Hyun Ahn; Tae Eun Ha; Eun Kyung Jo; Hwarim Im; Yong Sang Kim

Electrical Characteristics of Solution-processed Hafnium-aluminum Oxide Gate Insulator with Addition of Hydrochloric Acid for a-IGZO Thin-Film Transistors

Jeong Hyun Ahn
, Tae Eun Ha
, Eun Kyung Jo
, Hwarim Im
, Yong Sang Kim

Sungkyunkwan University

Research output: Contribution to journal › Conference article › peer-review

Abstract

This paper introduces a study on solution-processed HfAlOx dielectric films prepared by different ratios of Hf and Al applied to amorphous indium-gallium-zinc oxide(a-IGZO) thin-film transistors (TFTs). We also investigated the influence of hydrochloric acid (HCl) incorporation on the electrical characteristics of HfAlOx dielectric films.

Original language	English
Pages (from-to)	206-209
Number of pages	4
Journal	Proceedings of the International Display Workshops
Volume	29
State	Published - 2022
Externally published	Yes
Event	29th International Display Workshops, IDW 2022 - Fukuoka, Japan Duration: 14 Dec 2022 → 16 Dec 2022

Keywords

a-InGaZnO thin film transistor
Hafnium-aluminum oxide
High-k
Hydrochloric acid
Solution process

Cite this

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title = "Electrical Characteristics of Solution-processed Hafnium-aluminum Oxide Gate Insulator with Addition of Hydrochloric Acid for a-IGZO Thin-Film Transistors",

abstract = "This paper introduces a study on solution-processed HfAlOx dielectric films prepared by different ratios of Hf and Al applied to amorphous indium-gallium-zinc oxide(a-IGZO) thin-film transistors (TFTs). We also investigated the influence of hydrochloric acid (HCl) incorporation on the electrical characteristics of HfAlOx dielectric films.",

keywords = "a-InGaZnO thin film transistor, Hafnium-aluminum oxide, High-k, Hydrochloric acid, Solution process",

author = "Ahn, \{Jeong Hyun\} and Ha, \{Tae Eun\} and Jo, \{Eun Kyung\} and Hwarim Im and Kim, \{Yong Sang\}",

note = "Publisher Copyright: {\textcopyright} 2022 ITE and SID.; 29th International Display Workshops, IDW 2022 ; Conference date: 14-12-2022 Through 16-12-2022",

year = "2022",

language = "English",

volume = "29",

pages = "206--209",

journal = "Proceedings of the International Display Workshops",

issn = "1883-2490",

publisher = "International Display Workshops",

}

Electrical Characteristics of Solution-processed Hafnium-aluminum Oxide Gate Insulator with Addition of Hydrochloric Acid for a-IGZO Thin-Film Transistors. / Ahn, Jeong Hyun; Ha, Tae Eun; Jo, Eun Kyung et al.
In: Proceedings of the International Display Workshops, Vol. 29, 2022, p. 206-209.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Electrical Characteristics of Solution-processed Hafnium-aluminum Oxide Gate Insulator with Addition of Hydrochloric Acid for a-IGZO Thin-Film Transistors

AU - Ahn, Jeong Hyun

AU - Ha, Tae Eun

AU - Jo, Eun Kyung

AU - Im, Hwarim

AU - Kim, Yong Sang

PY - 2022

Y1 - 2022

N2 - This paper introduces a study on solution-processed HfAlOx dielectric films prepared by different ratios of Hf and Al applied to amorphous indium-gallium-zinc oxide(a-IGZO) thin-film transistors (TFTs). We also investigated the influence of hydrochloric acid (HCl) incorporation on the electrical characteristics of HfAlOx dielectric films.

AB - This paper introduces a study on solution-processed HfAlOx dielectric films prepared by different ratios of Hf and Al applied to amorphous indium-gallium-zinc oxide(a-IGZO) thin-film transistors (TFTs). We also investigated the influence of hydrochloric acid (HCl) incorporation on the electrical characteristics of HfAlOx dielectric films.

KW - a-InGaZnO thin film transistor

KW - Hafnium-aluminum oxide

KW - High-k

KW - Hydrochloric acid

KW - Solution process

UR - https://www.scopus.com/pages/publications/85175264608

M3 - Conference article

AN - SCOPUS:85175264608

SN - 1883-2490

VL - 29

SP - 206

EP - 209

JO - Proceedings of the International Display Workshops

JF - Proceedings of the International Display Workshops

T2 - 29th International Display Workshops, IDW 2022

Y2 - 14 December 2022 through 16 December 2022

ER -

Electrical Characteristics of Solution-processed Hafnium-aluminum Oxide Gate Insulator with Addition of Hydrochloric Acid for a-IGZO Thin-Film Transistors

Abstract

Keywords

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